Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization

Huaxiang Yin, Xianyu Wenxu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, T. Noguchi

Research output: Contribution to conferencePaper

Abstract

Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET [1], Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.

Original languageEnglish
Pages1991-1994
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yin, H., Wenxu, X., Jung, J., Cho, H., Kim, D., Park, K., Kwon, J., & Noguchi, T. (2004). Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization. 1991-1994. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.