Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization

Huaxiang Yin, Xianyu Wenxu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jang-Yeon Kwon, T. Noguchi

Research output: Contribution to conferencePaper

Abstract

Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET [1], Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.

Original languageEnglish
Pages1991-1994
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

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Polysilicon
Crystallization
Thin film devices
Temperature
Glass
Geometry
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yin, H., Wenxu, X., Jung, J., Cho, H., Kim, D., Park, K., ... Noguchi, T. (2004). Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization. 1991-1994. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.
Yin, Huaxiang ; Wenxu, Xianyu ; Jung, Jisim ; Cho, Hans ; Kim, Doyoung ; Park, Kyungbae ; Kwon, Jang-Yeon ; Noguchi, T. / Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.4 p.
@conference{b9638a4b418d48bbb89926db5011fd98,
title = "Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization",
abstract = "Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET [1], Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.",
author = "Huaxiang Yin and Xianyu Wenxu and Jisim Jung and Hans Cho and Doyoung Kim and Kyungbae Park and Jang-Yeon Kwon and T. Noguchi",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "1991--1994",
note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

Yin, H, Wenxu, X, Jung, J, Cho, H, Kim, D, Park, K, Kwon, J-Y & Noguchi, T 2004, 'Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization' Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 04/10/18 - 04/10/21, pp. 1991-1994.

Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization. / Yin, Huaxiang; Wenxu, Xianyu; Jung, Jisim; Cho, Hans; Kim, Doyoung; Park, Kyungbae; Kwon, Jang-Yeon; Noguchi, T.

2004. 1991-1994 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization

AU - Yin, Huaxiang

AU - Wenxu, Xianyu

AU - Jung, Jisim

AU - Cho, Hans

AU - Kim, Doyoung

AU - Park, Kyungbae

AU - Kwon, Jang-Yeon

AU - Noguchi, T.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET [1], Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.

AB - Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET [1], Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.

UR - http://www.scopus.com/inward/record.url?scp=21644479003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644479003&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644479003

SP - 1991

EP - 1994

ER -

Yin H, Wenxu X, Jung J, Cho H, Kim D, Park K et al. Method of LTPS TFT with Fin-like structure and its channel self-selective enhanced crystallization. 2004. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.