Forming high-quality Si film on glass with a small cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG application. A new method of applying Fin-like channel structure into LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produce a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect the high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor SOI FinFET , Fin-like LTPS TFT structure demonstrates sharp subthreshold slope, high transcondunctance and short channel effect immunity than the conventional thin film device by the ISE simulation.
|Number of pages||4|
|Publication status||Published - 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 2004 Oct 18 → 2004 Oct 21
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||04/10/18 → 04/10/21|
All Science Journal Classification (ASJC) codes