Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Pyung Moon, Jun Yeong Lim, Tae Un Youn, Keum Whan Noh, Sung Kye Park, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

Original languageEnglish
Pages (from-to)1338-1341
Number of pages4
JournalMicroelectronics Reliability
Volume53
Issue number9-11
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Flash memory
Leakage currents
floating
flash
leakage
methodology
Electric fields
electric fields
programming
Computer programming
Threshold voltage
threshold voltage
Data storage equipment
optimization
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Moon, Pyung ; Lim, Jun Yeong ; Youn, Tae Un ; Noh, Keum Whan ; Park, Sung Kye ; Yun, Ilgu. / Methodology for improvement of data retention in floating gate flash memory using leakage current estimation. In: Microelectronics Reliability. 2013 ; Vol. 53, No. 9-11. pp. 1338-1341.
@article{924bea90dce54356ae9805b83eff4936,
title = "Methodology for improvement of data retention in floating gate flash memory using leakage current estimation",
abstract = "The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.",
author = "Pyung Moon and Lim, {Jun Yeong} and Youn, {Tae Un} and Noh, {Keum Whan} and Park, {Sung Kye} and Ilgu Yun",
year = "2013",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2013.07.007",
language = "English",
volume = "53",
pages = "1338--1341",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "9-11",

}

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation. / Moon, Pyung; Lim, Jun Yeong; Youn, Tae Un; Noh, Keum Whan; Park, Sung Kye; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 53, No. 9-11, 01.09.2013, p. 1338-1341.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

AU - Moon, Pyung

AU - Lim, Jun Yeong

AU - Youn, Tae Un

AU - Noh, Keum Whan

AU - Park, Sung Kye

AU - Yun, Ilgu

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

AB - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

UR - http://www.scopus.com/inward/record.url?scp=84886892645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886892645&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2013.07.007

DO - 10.1016/j.microrel.2013.07.007

M3 - Article

AN - SCOPUS:84886892645

VL - 53

SP - 1338

EP - 1341

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-11

ER -