Abstract
The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 1338-1341 |
| Number of pages | 4 |
| Journal | Microelectronics Reliability |
| Volume | 53 |
| Issue number | 9-11 |
| DOIs | |
| Publication status | Published - 2013 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
}
Methodology for improvement of data retention in floating gate flash memory using leakage current estimation. / Moon, Pyung; Lim, Jun Yeong; Youn, Tae Un; Noh, Keum Whan; Park, Sung Kye; Yun, Ilgu.
In: Microelectronics Reliability, Vol. 53, No. 9-11, 01.09.2013, p. 1338-1341.Research output: Contribution to journal › Article
TY - JOUR
T1 - Methodology for improvement of data retention in floating gate flash memory using leakage current estimation
AU - Moon, Pyung
AU - Lim, Jun Yeong
AU - Youn, Tae Un
AU - Noh, Keum Whan
AU - Park, Sung Kye
AU - Yun, Ilgu
PY - 2013/9/1
Y1 - 2013/9/1
N2 - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.
AB - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.
UR - http://www.scopus.com/inward/record.url?scp=84886892645&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886892645&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2013.07.007
DO - 10.1016/j.microrel.2013.07.007
M3 - Article
AN - SCOPUS:84886892645
VL - 53
SP - 1338
EP - 1341
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 9-11
ER -