Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Pyung Moon; Jun Yeong Lim; Tae Un Youn; Keum Whan Noh; Sung Kye Park; Ilgu Yun

doi:10.1016/j.microrel.2013.07.007

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Pyung Moon, Jun Yeong Lim, Tae Un Youn, Keum Whan Noh, Sung Kye Park, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

Original language	English
Pages (from-to)	1338-1341
Number of pages	4
Journal	Microelectronics Reliability
Volume	53
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2013.07.007
Publication status	Published - 2013 Sep

Bibliographical note

Funding Information:
This work was supported as a research project of SK hynix Semiconductor, Inc.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2013.07.007

Cite this

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title = "Methodology for improvement of data retention in floating gate flash memory using leakage current estimation",

abstract = "The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.",

author = "Pyung Moon and Lim, {Jun Yeong} and Youn, {Tae Un} and Noh, {Keum Whan} and Park, {Sung Kye} and Ilgu Yun",

note = "Funding Information: This work was supported as a research project of SK hynix Semiconductor, Inc.",

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doi = "10.1016/j.microrel.2013.07.007",

language = "English",

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T1 - Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

AU - Moon, Pyung

AU - Lim, Jun Yeong

AU - Youn, Tae Un

AU - Noh, Keum Whan

AU - Park, Sung Kye

AU - Yun, Ilgu

N1 - Funding Information: This work was supported as a research project of SK hynix Semiconductor, Inc.

PY - 2013/9

Y1 - 2013/9

N2 - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

AB - The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is increased. In order to improve data retention characteristics, the minimization of leakage current variation with respect to the applied electric field on IPD is necessary. In this paper, the effect of the electric potential of IPD on the leakage current is examined and the leakage current at low electric field is predicted. Based on the results, the method for improving the data retention by reducing the leakage current is proposed.

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Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Abstract

Bibliographical note

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