Methods for distinguishing mott transitions from anderson transitions

Yue Wang, Kyung Mun Kang, Minjae Kim, Hyang Keun Yoo, Hyung Ho Park

Research output: Contribution to journalArticle

Abstract

Metal-insulator transitions (MITs) (resistive switching) is an important research area. The underlying mechanisms are complex and have not been completely understood. Two or more different transitions can be induced simultaneously. Thus, to better understand the mechanisms of MITs for a specific material, it is necessary to design criteria for differentiating between transition mechanisms. Here, we studied resistive switching in Mott and Anderson insulators. These insulators (exhibiting Mott and Anderson resistive switching) were distinguished based on their properties. In Anderson insulators, electron states are localised at the Fermi level without a band gap, and resistivity is given by ln ρ = AT–1/4 within a certain range of temperatures. However, in Mott insulators, the Fermi level features a band gap, and ln ρ does not linearly depend on T–1/4. Therefore, optical conductivity, which can predict materials’ band gaps and resistivity-temperature characteristics, can be used for distinguishing between Mott and Anderson types of resistive switching.

Original languageEnglish
Pages (from-to)493-504
Number of pages12
JournalInternational Journal of Nanotechnology
Volume15
Issue number6-7
DOIs
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Bioengineering

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