Microcrystalline Si TFTs with low off-current and high reliability

Hyun Jae Kim; Bui Van Diep; Yvan Bonnassieux; Yassine Djeridane; Alexey Abramov; Pere Roca i Cabarrocas

Microcrystalline Si TFTs with low off-current and high reliability

Hyun Jae Kim, Bui Van Diep, Yvan Bonnassieux, Yassine Djeridane, Alexey Abramov, Pere Roca i Cabarrocas

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article

Abstract

Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N₂ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with V_data of 10 V. After the simulation, a linear equation for the pixel current was suggested.

Original language	English
Pages (from-to)	1025-1028
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2
Publication status	Published - 2006 Dec 1
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23

All Science Journal Classification (ASJC) codes

Engineering(all)

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Kim, H. J., Diep, B. V., Bonnassieux, Y., Djeridane, Y., Abramov, A., & Roca i Cabarrocas, P. (2006). Microcrystalline Si TFTs with low off-current and high reliability. Proceedings of International Meeting on Information Display, 2, 1025-1028.

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title = "Microcrystalline Si TFTs with low off-current and high reliability",

abstract = "Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.",

author = "Kim, {Hyun Jae} and Diep, {Bui Van} and Yvan Bonnassieux and Yassine Djeridane and Alexey Abramov and {Roca i Cabarrocas}, Pere",

year = "2006",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "1025--1028",

journal = "Proceedings of International Meeting on Information Display",

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T1 - Microcrystalline Si TFTs with low off-current and high reliability

AU - Kim, Hyun Jae

AU - Diep, Bui Van

AU - Bonnassieux, Yvan

AU - Djeridane, Yassine

AU - Abramov, Alexey

AU - Roca i Cabarrocas, Pere

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.

AB - Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.

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JO - Proceedings of International Meeting on Information Display

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T2 - 5th International Meeting on Information Display

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