Microcrystalline Si TFTs with low off-current and high reliability

Hyun Jae Kim, Bui Van Diep, Yvan Bonnassieux, Yassine Djeridane, Alexey Abramov, Pere Roca i Cabarrocas

Research output: Contribution to journalConference article

Abstract

Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.

Original languageEnglish
Pages (from-to)1025-1028
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006 Dec 1

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Pixels
Display devices
Organic light emitting diodes (OLED)
Linear equations
Passivation
Masks
Nucleation
Plasmas
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, H. J., Diep, B. V., Bonnassieux, Y., Djeridane, Y., Abramov, A., & Roca i Cabarrocas, P. (2006). Microcrystalline Si TFTs with low off-current and high reliability. Proceedings of International Meeting on Information Display, 2, 1025-1028.
Kim, Hyun Jae ; Diep, Bui Van ; Bonnassieux, Yvan ; Djeridane, Yassine ; Abramov, Alexey ; Roca i Cabarrocas, Pere. / Microcrystalline Si TFTs with low off-current and high reliability. In: Proceedings of International Meeting on Information Display. 2006 ; Vol. 2. pp. 1025-1028.
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Kim, HJ, Diep, BV, Bonnassieux, Y, Djeridane, Y, Abramov, A & Roca i Cabarrocas, P 2006, 'Microcrystalline Si TFTs with low off-current and high reliability', Proceedings of International Meeting on Information Display, vol. 2, pp. 1025-1028.

Microcrystalline Si TFTs with low off-current and high reliability. / Kim, Hyun Jae; Diep, Bui Van; Bonnassieux, Yvan; Djeridane, Yassine; Abramov, Alexey; Roca i Cabarrocas, Pere.

In: Proceedings of International Meeting on Information Display, Vol. 2, 01.12.2006, p. 1025-1028.

Research output: Contribution to journalConference article

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AU - Kim, Hyun Jae

AU - Diep, Bui Van

AU - Bonnassieux, Yvan

AU - Djeridane, Yassine

AU - Abramov, Alexey

AU - Roca i Cabarrocas, Pere

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N2 - Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.

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Kim HJ, Diep BV, Bonnassieux Y, Djeridane Y, Abramov A, Roca i Cabarrocas P. Microcrystalline Si TFTs with low off-current and high reliability. Proceedings of International Meeting on Information Display. 2006 Dec 1;2:1025-1028.