Abstract
Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.
| Original language | English |
|---|---|
| Pages (from-to) | 1025-1028 |
| Number of pages | 4 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 2 |
| Publication status | Published - 2006 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Microcrystalline Si TFTs with low off-current and high reliability. / Kim, Hyun Jae; Diep, Bui Van; Bonnassieux, Yvan; Djeridane, Yassine; Abramov, Alexey; Roca i Cabarrocas, Pere.
In: Proceedings of International Meeting on Information Display, Vol. 2, 01.12.2006, p. 1025-1028.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Microcrystalline Si TFTs with low off-current and high reliability
AU - Kim, Hyun Jae
AU - Diep, Bui Van
AU - Bonnassieux, Yvan
AU - Djeridane, Yassine
AU - Abramov, Alexey
AU - Roca i Cabarrocas, Pere
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.
AB - Microcrystalline Si (μc-Si) TFTs were fabricated using a conventional bottom gate amorphous Si (aSi) process. A unique μc-Si deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the μc-Si an N2 plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of μc-Si TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 μA was achieved with Vdata of 10 V. After the simulation, a linear equation for the pixel current was suggested.
UR - http://www.scopus.com/inward/record.url?scp=33847376076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847376076&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:33847376076
VL - 2
SP - 1025
EP - 1028
JO - Proceedings of International Meeting on Information Display
JF - Proceedings of International Meeting on Information Display
SN - 1738-7558
ER -