Microcrystalline silicon TFTs for active matrix displays

Diep Van Bui, Yvan Bonnassieux, Jean Yves Parey, Yassine Djeridane, Alexey Abramov, Pere Roca i Cabarrocas, Hyun Jae Kim

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Microcrystalline silicone (μ-Si:H) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si:H) process. A unique μc-Si:H deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si:H TFT process. In order to suppress nucleation at the bottom interface, a N2 plasma passivation was conducted before the deposition of the μc-Si:H. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slope of 0.7 V/dec. DC bias stress was applied to verify the use of pc-Si:H TFTs for AMOLED displays. After 10,000 s of stress application time, the off-current was even lowered and subthreshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 pA was achieved with a Vdata of 10 V. After the simulation, a linear equation for the pixel current was derived. We also present the simulation tests of simple logical electronics. At last, for Active matrix Display back-plane, a row driver with no shift compensation is simulated with good results in terms of reproducibility and reliability.

Original languageEnglish
Pages (from-to)204-207
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume37
Issue number1
Publication statusPublished - 2006 Dec 1

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Microcrystalline silicon
Pixels
Display devices
Organic light emitting diodes (OLED)
Linear equations
Passivation
Silicones
Masks
Nucleation
Electronic equipment
Plasmas
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Van Bui, D., Bonnassieux, Y., Parey, J. Y., Djeridane, Y., Abramov, A., Roca i Cabarrocas, P., & Kim, H. J. (2006). Microcrystalline silicon TFTs for active matrix displays. Digest of Technical Papers - SID International Symposium, 37(1), 204-207.
Van Bui, Diep ; Bonnassieux, Yvan ; Parey, Jean Yves ; Djeridane, Yassine ; Abramov, Alexey ; Roca i Cabarrocas, Pere ; Kim, Hyun Jae. / Microcrystalline silicon TFTs for active matrix displays. In: Digest of Technical Papers - SID International Symposium. 2006 ; Vol. 37, No. 1. pp. 204-207.
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abstract = "Microcrystalline silicone (μ-Si:H) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si:H) process. A unique μc-Si:H deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si:H TFT process. In order to suppress nucleation at the bottom interface, a N2 plasma passivation was conducted before the deposition of the μc-Si:H. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slope of 0.7 V/dec. DC bias stress was applied to verify the use of pc-Si:H TFTs for AMOLED displays. After 10,000 s of stress application time, the off-current was even lowered and subthreshold slope variation was less than 5{\%}. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 pA was achieved with a Vdata of 10 V. After the simulation, a linear equation for the pixel current was derived. We also present the simulation tests of simple logical electronics. At last, for Active matrix Display back-plane, a row driver with no shift compensation is simulated with good results in terms of reproducibility and reliability.",
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Van Bui, D, Bonnassieux, Y, Parey, JY, Djeridane, Y, Abramov, A, Roca i Cabarrocas, P & Kim, HJ 2006, 'Microcrystalline silicon TFTs for active matrix displays', Digest of Technical Papers - SID International Symposium, vol. 37, no. 1, pp. 204-207.

Microcrystalline silicon TFTs for active matrix displays. / Van Bui, Diep; Bonnassieux, Yvan; Parey, Jean Yves; Djeridane, Yassine; Abramov, Alexey; Roca i Cabarrocas, Pere; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 37, No. 1, 01.12.2006, p. 204-207.

Research output: Contribution to journalConference article

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AU - Van Bui, Diep

AU - Bonnassieux, Yvan

AU - Parey, Jean Yves

AU - Djeridane, Yassine

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AU - Roca i Cabarrocas, Pere

AU - Kim, Hyun Jae

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AB - Microcrystalline silicone (μ-Si:H) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si:H) process. A unique μc-Si:H deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si:H TFT process. In order to suppress nucleation at the bottom interface, a N2 plasma passivation was conducted before the deposition of the μc-Si:H. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub-threshold slope of 0.7 V/dec. DC bias stress was applied to verify the use of pc-Si:H TFTs for AMOLED displays. After 10,000 s of stress application time, the off-current was even lowered and subthreshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 pA was achieved with a Vdata of 10 V. After the simulation, a linear equation for the pixel current was derived. We also present the simulation tests of simple logical electronics. At last, for Active matrix Display back-plane, a row driver with no shift compensation is simulated with good results in terms of reproducibility and reliability.

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Van Bui D, Bonnassieux Y, Parey JY, Djeridane Y, Abramov A, Roca i Cabarrocas P et al. Microcrystalline silicon TFTs for active matrix displays. Digest of Technical Papers - SID International Symposium. 2006 Dec 1;37(1):204-207.