Abstract
A new microfabrication method that combines localized ion implantation and magnetorheological finishing is proposed. The proposed technique involves two steps. First, selected regions of a silicon wafer are irradiated with gallium ions by using a focused ion beam system. The mechanical properties of the irradiated regions are altered as a result of the ion implantation. Second, the wafer is processed by using a magnetorheological finishing method. During the finishing process, the regions not implanted with ion are preferentially removed. The material removal rate difference is utilized for microfabrication. The mechanisms of the proposed method are discussed, and applications are presented.
| Original language | English |
|---|---|
| Article number | 026503 |
| Journal | Applied Physics Express |
| Volume | 2 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Microfabrication method using a combination of local ion implantation and magnetorheological finishing. / Han, Jin; Kim, Jong Wook; Lee, Hiwon; Min, Byung-Kwon; Lee, Sang Jo.
In: Applied Physics Express, Vol. 2, No. 2, 026503, 01.02.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Microfabrication method using a combination of local ion implantation and magnetorheological finishing
AU - Han, Jin
AU - Kim, Jong Wook
AU - Lee, Hiwon
AU - Min, Byung-Kwon
AU - Lee, Sang Jo
PY - 2009/2/1
Y1 - 2009/2/1
N2 - A new microfabrication method that combines localized ion implantation and magnetorheological finishing is proposed. The proposed technique involves two steps. First, selected regions of a silicon wafer are irradiated with gallium ions by using a focused ion beam system. The mechanical properties of the irradiated regions are altered as a result of the ion implantation. Second, the wafer is processed by using a magnetorheological finishing method. During the finishing process, the regions not implanted with ion are preferentially removed. The material removal rate difference is utilized for microfabrication. The mechanisms of the proposed method are discussed, and applications are presented.
AB - A new microfabrication method that combines localized ion implantation and magnetorheological finishing is proposed. The proposed technique involves two steps. First, selected regions of a silicon wafer are irradiated with gallium ions by using a focused ion beam system. The mechanical properties of the irradiated regions are altered as a result of the ion implantation. Second, the wafer is processed by using a magnetorheological finishing method. During the finishing process, the regions not implanted with ion are preferentially removed. The material removal rate difference is utilized for microfabrication. The mechanisms of the proposed method are discussed, and applications are presented.
UR - http://www.scopus.com/inward/record.url?scp=60349108045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60349108045&partnerID=8YFLogxK
U2 - 10.1143/APEX.2.026503
DO - 10.1143/APEX.2.026503
M3 - Article
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 2
M1 - 026503
ER -