Microhardness and surface roughness of silicon carbide by chemical vapour deposition

Dong Joo Kim; Doo Jin Choi

doi:10.1023/A:1018549001328

Microhardness and surface roughness of silicon carbide by chemical vapour deposition

Dong Joo Kim, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Original language	English
Pages (from-to)	286-289
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	16
Issue number	4
DOIs	https://doi.org/10.1023/A:1018549001328
Publication status	Published - 1997

Bibliographical note

Funding Information:
The work was supported by the Ministry of Education research fund for advanced materials in 1995.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1023/A:1018549001328

Cite this

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title = "Microhardness and surface roughness of silicon carbide by chemical vapour deposition",

author = "Kim, {Dong Joo} and Choi, {Doo Jin}",

note = "Funding Information: The work was supported by the Ministry of Education research fund for advanced materials in 1995.",

year = "1997",

doi = "10.1023/A:1018549001328",

language = "English",

volume = "16",

pages = "286--289",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

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T1 - Microhardness and surface roughness of silicon carbide by chemical vapour deposition

AU - Kim, Dong Joo

AU - Choi, Doo Jin

N1 - Funding Information: The work was supported by the Ministry of Education research fund for advanced materials in 1995.

PY - 1997

Y1 - 1997

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U2 - 10.1023/A:1018549001328

DO - 10.1023/A:1018549001328

M3 - Article

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SN - 0261-8028

VL - 16

SP - 286

EP - 289

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 4

ER -

Microhardness and surface roughness of silicon carbide by chemical vapour deposition

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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Cite this