Microlensed red and violet diode lasers in an extended cavity geometry

A. E. Carruthers, T. K. Lake, A. Shah, J. W. Allen, W. Sibbett, K. Dholakia

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We examine the behavior of two microlensed diode lasers at 413 and 661 nm placed in both free-running and extended cavity geometries. The 25 mW free-running 413 nm diode shows current tuning over 40 GHz and the 50 mW, 661 nm diode shows tuning of 55 GHz. In extended cavity the 413 nm diode coarsely tunes 5 nm and finely tunes 6 GHz, with a linewidth of 4 MHz. The 661 nm diode coarsely tunes 11 nm with fine tuning of 6 GHz. Beam profile ratios for the 413 and 661 nm microlensed diodes are 1:1.06 and 1:1.10 respectively.

Original languageEnglish
Pages (from-to)3360-3362
Number of pages3
JournalReview of Scientific Instruments
Volume75
Issue number10 I
DOIs
Publication statusPublished - 2004 Oct 1

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Semiconductor lasers
Diodes
semiconductor lasers
diodes
cavities
Geometry
geometry
Tuning
tuning
Linewidth
profiles

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Carruthers, A. E., Lake, T. K., Shah, A., Allen, J. W., Sibbett, W., & Dholakia, K. (2004). Microlensed red and violet diode lasers in an extended cavity geometry. Review of Scientific Instruments, 75(10 I), 3360-3362. https://doi.org/10.1063/1.1791311
Carruthers, A. E. ; Lake, T. K. ; Shah, A. ; Allen, J. W. ; Sibbett, W. ; Dholakia, K. / Microlensed red and violet diode lasers in an extended cavity geometry. In: Review of Scientific Instruments. 2004 ; Vol. 75, No. 10 I. pp. 3360-3362.
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Carruthers, AE, Lake, TK, Shah, A, Allen, JW, Sibbett, W & Dholakia, K 2004, 'Microlensed red and violet diode lasers in an extended cavity geometry', Review of Scientific Instruments, vol. 75, no. 10 I, pp. 3360-3362. https://doi.org/10.1063/1.1791311

Microlensed red and violet diode lasers in an extended cavity geometry. / Carruthers, A. E.; Lake, T. K.; Shah, A.; Allen, J. W.; Sibbett, W.; Dholakia, K.

In: Review of Scientific Instruments, Vol. 75, No. 10 I, 01.10.2004, p. 3360-3362.

Research output: Contribution to journalArticle

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AU - Lake, T. K.

AU - Shah, A.

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AU - Dholakia, K.

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AB - We examine the behavior of two microlensed diode lasers at 413 and 661 nm placed in both free-running and extended cavity geometries. The 25 mW free-running 413 nm diode shows current tuning over 40 GHz and the 50 mW, 661 nm diode shows tuning of 55 GHz. In extended cavity the 413 nm diode coarsely tunes 5 nm and finely tunes 6 GHz, with a linewidth of 4 MHz. The 661 nm diode coarsely tunes 11 nm with fine tuning of 6 GHz. Beam profile ratios for the 413 and 661 nm microlensed diodes are 1:1.06 and 1:1.10 respectively.

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