Micro/nanomechanical properties of aluminum-doped zinc oxide films prepared by radio frequency magnetron sputtering

Li Yu Lin, Min Chang Jeong, Dae Eun Kim, Jae Min Myoung

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Aluminum-doped zinc oxide (ZnO) was grown on glass substrates by using RF magnetron sputtering. In order to investigate the effect of growth temperature on the mechanical properties of Al-doped ZnO films, the temperature of the substrates during deposition was controlled at room temperature (R.T.), 150 °C, and 300 °C. The crystal structure and topography of the deposited films were investigated by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The mechanical properties of films were measured by using nanoindentation and micro-reciprocating pin-on-plate tester to characterize the hardness, modulus, and tribological behavior. The tribological behavior of silicon (100) wafer was also obtained to compare with that of the Al-doped ZnO. It was found that Al-doped ZnO films with (002) oriented plane was favored at high growth temperature. The mechanical properties of the films were significantly affected by growth temperature. The film grown at room temperature showed a relatively low friction coefficient of 0.25 and high wear resistance.

Original languageEnglish
Pages (from-to)2547-2552
Number of pages6
JournalSurface and Coatings Technology
Volume201
Issue number6
DOIs
Publication statusPublished - 2006 Dec 4

Fingerprint

Zinc Oxide
Zinc oxide
Aluminum
zinc oxides
Magnetron sputtering
Oxide films
oxide films
radio frequencies
magnetron sputtering
Growth temperature
aluminum
mechanical properties
Mechanical properties
temperature
room temperature
Substrates
Nanoindentation
nanoindentation
test equipment
wear resistance

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "Aluminum-doped zinc oxide (ZnO) was grown on glass substrates by using RF magnetron sputtering. In order to investigate the effect of growth temperature on the mechanical properties of Al-doped ZnO films, the temperature of the substrates during deposition was controlled at room temperature (R.T.), 150 °C, and 300 °C. The crystal structure and topography of the deposited films were investigated by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The mechanical properties of films were measured by using nanoindentation and micro-reciprocating pin-on-plate tester to characterize the hardness, modulus, and tribological behavior. The tribological behavior of silicon (100) wafer was also obtained to compare with that of the Al-doped ZnO. It was found that Al-doped ZnO films with (002) oriented plane was favored at high growth temperature. The mechanical properties of the films were significantly affected by growth temperature. The film grown at room temperature showed a relatively low friction coefficient of 0.25 and high wear resistance.",
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Micro/nanomechanical properties of aluminum-doped zinc oxide films prepared by radio frequency magnetron sputtering. / Lin, Li Yu; Jeong, Min Chang; Kim, Dae Eun; Myoung, Jae Min.

In: Surface and Coatings Technology, Vol. 201, No. 6, 04.12.2006, p. 2547-2552.

Research output: Contribution to journalArticle

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AU - Jeong, Min Chang

AU - Kim, Dae Eun

AU - Myoung, Jae Min

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AB - Aluminum-doped zinc oxide (ZnO) was grown on glass substrates by using RF magnetron sputtering. In order to investigate the effect of growth temperature on the mechanical properties of Al-doped ZnO films, the temperature of the substrates during deposition was controlled at room temperature (R.T.), 150 °C, and 300 °C. The crystal structure and topography of the deposited films were investigated by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The mechanical properties of films were measured by using nanoindentation and micro-reciprocating pin-on-plate tester to characterize the hardness, modulus, and tribological behavior. The tribological behavior of silicon (100) wafer was also obtained to compare with that of the Al-doped ZnO. It was found that Al-doped ZnO films with (002) oriented plane was favored at high growth temperature. The mechanical properties of the films were significantly affected by growth temperature. The film grown at room temperature showed a relatively low friction coefficient of 0.25 and high wear resistance.

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