Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

Sang Wook Jung; Soo Sang Chae; Jee Ho Park; Jin Young Oh; Suk Ho Bhang; Hong Koo Baik; Tae Il Lee

doi:10.1021/acsami.5b10847

Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

Sang Wook Jung, Soo Sang Chae, Jee Ho Park, Jin Young Oh, Suk Ho Bhang, Hong Koo Baik, Tae Il Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In₂O₃, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.

Original language	English
Pages (from-to)	7205-7211
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	11
DOIs	https://doi.org/10.1021/acsami.5b10847
Publication status	Published - 2016 Mar 30

Bibliographical note

Funding Information:
This work was supported by the Gachon University research fund of 2014(GCU-2014-0216). Further funding was provided by LG Display.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.5b10847

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title = "Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors",

abstract = "We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.",

author = "Jung, {Sang Wook} and Chae, {Soo Sang} and Park, {Jee Ho} and Oh, {Jin Young} and Bhang, {Suk Ho} and Baik, {Hong Koo} and Lee, {Tae Il}",

note = "Funding Information: This work was supported by the Gachon University research fund of 2014(GCU-2014-0216). Further funding was provided by LG Display. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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doi = "10.1021/acsami.5b10847",

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AU - Jung, Sang Wook

AU - Chae, Soo Sang

AU - Park, Jee Ho

AU - Oh, Jin Young

AU - Bhang, Suk Ho

AU - Baik, Hong Koo

AU - Lee, Tae Il

N1 - Funding Information: This work was supported by the Gachon University research fund of 2014(GCU-2014-0216). Further funding was provided by LG Display. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/3/30

Y1 - 2016/3/30

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AB - We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.

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Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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