Microscopic origins of electron and hole stability in ZnO

C. Richard A. Catlow, Alexey A. Sokol, Aron Walsh

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

Original languageEnglish
Pages (from-to)3386-3388
Number of pages3
JournalChemical Communications
Volume47
Issue number12
DOIs
Publication statusPublished - 2011 Mar 28

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Doping (additives)
Thermodynamics
Electrons

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Catlow, C. Richard A. ; Sokol, Alexey A. ; Walsh, Aron. / Microscopic origins of electron and hole stability in ZnO. In: Chemical Communications. 2011 ; Vol. 47, No. 12. pp. 3386-3388.
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Microscopic origins of electron and hole stability in ZnO. / Catlow, C. Richard A.; Sokol, Alexey A.; Walsh, Aron.

In: Chemical Communications, Vol. 47, No. 12, 28.03.2011, p. 3386-3388.

Research output: Contribution to journalArticle

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