Abstract
Interfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction (XRD), Auger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380 °C. The contact is thermally stable even after isothermal annealing for 5h at 400 °C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 571-576 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 427 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering