Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

J. S. Kwak, H. K. Baik, H. Kim, J. L. Lee, D. W. Shin, C. G. Park

Research output: Contribution to journalConference article

Abstract

Interfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction (XRD), Auger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380 °C. The contact is thermally stable even after isothermal annealing for 5h at 400 °C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.

Original languageEnglish
Pages (from-to)571-576
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
Publication statusPublished - 1996 Dec 1

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Ohmic contacts
Vacancies
electric contacts
Isothermal annealing
annealing
Auger electron spectroscopy
Contact resistance
contact resistance
Auger spectroscopy
electron spectroscopy
Electric properties
x ray diffraction
Diffraction
electrical properties
Annealing
Transmission electron microscopy
X rays
transmission electron microscopy
microstructure
Microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kwak, J. S. ; Baik, H. K. ; Kim, H. ; Lee, J. L. ; Shin, D. W. ; Park, C. G. / Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 427. pp. 571-576.
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abstract = "Interfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction (XRD), Auger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380 °C. The contact is thermally stable even after isothermal annealing for 5h at 400 °C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.",
author = "Kwak, {J. S.} and Baik, {H. K.} and H. Kim and Lee, {J. L.} and Shin, {D. W.} and Park, {C. G.}",
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Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs. / Kwak, J. S.; Baik, H. K.; Kim, H.; Lee, J. L.; Shin, D. W.; Park, C. G.

In: Materials Research Society Symposium - Proceedings, Vol. 427, 01.12.1996, p. 571-576.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

AU - Kwak, J. S.

AU - Baik, H. K.

AU - Kim, H.

AU - Lee, J. L.

AU - Shin, D. W.

AU - Park, C. G.

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AB - Interfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction (XRD), Auger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380 °C. The contact is thermally stable even after isothermal annealing for 5h at 400 °C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.

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