Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

J. S. Kwak, H. N. Kim, H. K. Baik, J. L. Lee, D. W. Shin, C. G. Park, H. Kim, K. E. Pyun

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Abstract

Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.

Original languageEnglish
Pages (from-to)3904-3909
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number7
DOIs
Publication statusPublished - 1996 Oct 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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