Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

J. S. Kwak; H. N. Kim; H. K. Baik; J. L. Lee; D. W. Shin; C. G. Park; H. Kim; K. E. Pyun

doi:10.1063/1.363347

Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

J. S. Kwak, H. N. Kim, H. K. Baik, J. L. Lee, D. W. Shin, C. G. Park, H. Kim, K. E. Pyun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au₄Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.

Original language	English
Pages (from-to)	3904-3909
Number of pages	6
Journal	Journal of Applied Physics
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.363347
Publication status	Published - 1996 Oct 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs",

abstract = "Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.",

author = "Kwak, {J. S.} and Kim, {H. N.} and Baik, {H. K.} and Lee, {J. L.} and Shin, {D. W.} and Park, {C. G.} and H. Kim and Pyun, {K. E.}",

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T1 - Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

AU - Kwak, J. S.

AU - Kim, H. N.

AU - Baik, H. K.

AU - Lee, J. L.

AU - Shin, D. W.

AU - Park, C. G.

AU - Kim, H.

AU - Pyun, K. E.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.

AB - Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.

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Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

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