Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

J. S. Kwak, H. N. Kim, Hong Koo Baik, J. L. Lee, D. W. Shin, C. G. Park, H. Kim, K. E. Pyun

Research output: Contribution to journalArticle

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Abstract

Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300°C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380°C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380°C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge.

Original languageEnglish
Pages (from-to)3904-3909
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number7
DOIs
Publication statusPublished - 1996 Oct 1

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contact resistance
electric contacts
spikes
solid phases
grain boundaries
electrical properties
transmission electron microscopy
microstructure
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kwak, J. S., Kim, H. N., Baik, H. K., Lee, J. L., Shin, D. W., Park, C. G., ... Pyun, K. E. (1996). Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs. Journal of Applied Physics, 80(7), 3904-3909. https://doi.org/10.1063/1.363347
Kwak, J. S. ; Kim, H. N. ; Baik, Hong Koo ; Lee, J. L. ; Shin, D. W. ; Park, C. G. ; Kim, H. ; Pyun, K. E. / Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 7. pp. 3904-3909.
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Kwak, JS, Kim, HN, Baik, HK, Lee, JL, Shin, DW, Park, CG, Kim, H & Pyun, KE 1996, 'Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs', Journal of Applied Physics, vol. 80, no. 7, pp. 3904-3909. https://doi.org/10.1063/1.363347

Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs. / Kwak, J. S.; Kim, H. N.; Baik, Hong Koo; Lee, J. L.; Shin, D. W.; Park, C. G.; Kim, H.; Pyun, K. E.

In: Journal of Applied Physics, Vol. 80, No. 7, 01.10.1996, p. 3904-3909.

Research output: Contribution to journalArticle

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AU - Kwak, J. S.

AU - Kim, H. N.

AU - Baik, Hong Koo

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AU - Shin, D. W.

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AU - Pyun, K. E.

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