Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays

Huihu Wang, Seonghoon Baek, Jaejin Song, Jonghyuck Lee, Sangwoo Lim

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on a ZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine (C6H12N4), zinc nitrate hexahydrate (Zn(NO3)2·6H2O), and gallium nitrate hydrate (Ga(NO3)3·xH2O). The microstructure characteristics and optical properties of the nanorod arrays were analyzed using different characterization techniques including field-emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The experimental results show that the morphology, density, and surface compositions of ZnO nanorod arrays are sensitive to the concentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorod arrays show three different emissions, including UV (ultraviolet), yellow, and NIR (near infrared) emissions. With the increase in the Ga doping level, the luminescence quality of ZnO nanorods has been improved. The peak of UV emission has a small redshift, which can be ascribed to the combined effect of size and Ga doping. Furthermore, Ga doping has caused defects that respond to NIR emission.

Original languageEnglish
Article number075607
JournalNanotechnology
Volume19
Issue number7
DOIs
Publication statusPublished - 2008 Feb 14

Fingerprint

Zinc Oxide
Zinc oxide
Nanorods
gallium nitrate
Nitrates
Doping (additives)
Gallium
Hydrates
Photoluminescence
Methenamine
Infrared radiation
Silicon
Photoelectron spectroscopy
Surface structure
Field emission
Luminescence
Zinc
Optical properties
X rays
Defects

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Wang, Huihu ; Baek, Seonghoon ; Song, Jaejin ; Lee, Jonghyuck ; Lim, Sangwoo. / Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays. In: Nanotechnology. 2008 ; Vol. 19, No. 7.
@article{70d289c4a9524bdfba8fcfa7b37fdbf2,
title = "Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays",
abstract = "Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on a ZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine (C6H12N4), zinc nitrate hexahydrate (Zn(NO3)2·6H2O), and gallium nitrate hydrate (Ga(NO3)3·xH2O). The microstructure characteristics and optical properties of the nanorod arrays were analyzed using different characterization techniques including field-emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The experimental results show that the morphology, density, and surface compositions of ZnO nanorod arrays are sensitive to the concentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorod arrays show three different emissions, including UV (ultraviolet), yellow, and NIR (near infrared) emissions. With the increase in the Ga doping level, the luminescence quality of ZnO nanorods has been improved. The peak of UV emission has a small redshift, which can be ascribed to the combined effect of size and Ga doping. Furthermore, Ga doping has caused defects that respond to NIR emission.",
author = "Huihu Wang and Seonghoon Baek and Jaejin Song and Jonghyuck Lee and Sangwoo Lim",
year = "2008",
month = "2",
day = "14",
doi = "10.1088/0957-4484/19/7/075607",
language = "English",
volume = "19",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "7",

}

Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays. / Wang, Huihu; Baek, Seonghoon; Song, Jaejin; Lee, Jonghyuck; Lim, Sangwoo.

In: Nanotechnology, Vol. 19, No. 7, 075607, 14.02.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays

AU - Wang, Huihu

AU - Baek, Seonghoon

AU - Song, Jaejin

AU - Lee, Jonghyuck

AU - Lim, Sangwoo

PY - 2008/2/14

Y1 - 2008/2/14

N2 - Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on a ZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine (C6H12N4), zinc nitrate hexahydrate (Zn(NO3)2·6H2O), and gallium nitrate hydrate (Ga(NO3)3·xH2O). The microstructure characteristics and optical properties of the nanorod arrays were analyzed using different characterization techniques including field-emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The experimental results show that the morphology, density, and surface compositions of ZnO nanorod arrays are sensitive to the concentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorod arrays show three different emissions, including UV (ultraviolet), yellow, and NIR (near infrared) emissions. With the increase in the Ga doping level, the luminescence quality of ZnO nanorods has been improved. The peak of UV emission has a small redshift, which can be ascribed to the combined effect of size and Ga doping. Furthermore, Ga doping has caused defects that respond to NIR emission.

AB - Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on a ZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine (C6H12N4), zinc nitrate hexahydrate (Zn(NO3)2·6H2O), and gallium nitrate hydrate (Ga(NO3)3·xH2O). The microstructure characteristics and optical properties of the nanorod arrays were analyzed using different characterization techniques including field-emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The experimental results show that the morphology, density, and surface compositions of ZnO nanorod arrays are sensitive to the concentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorod arrays show three different emissions, including UV (ultraviolet), yellow, and NIR (near infrared) emissions. With the increase in the Ga doping level, the luminescence quality of ZnO nanorods has been improved. The peak of UV emission has a small redshift, which can be ascribed to the combined effect of size and Ga doping. Furthermore, Ga doping has caused defects that respond to NIR emission.

UR - http://www.scopus.com/inward/record.url?scp=38949218386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38949218386&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/19/7/075607

DO - 10.1088/0957-4484/19/7/075607

M3 - Article

C2 - 21817644

AN - SCOPUS:38949218386

VL - 19

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 7

M1 - 075607

ER -