Microstructural evolution of Co2GaAs thin film on GaAs substrate

D. W. Shin, C. G. Park, J. S. Kwak, Hong Koo Baik

Research output: Contribution to journalConference article

Abstract

Interfacial reactions and epitaxial growth of the microstructure between cobalt thin film and (100)-oriented GaAs substrate have been studied, using X-ray diffraction, transmission electron microscopy and EDS analysis. Cobalt thin films were deposited by e-beam evaporation, and were subsequently annealed at 400 °C. The reaction layer evolved due to the annealing was identified as the ternary phase, Co2GaAs, that was grown epitaxially on the substrate. The new orientation relationship between Co2GaAs and GaAs substrate was found as 〈110〉Co2GaAs ∥ 〈100〉GaAs and {001}Co2GaAs ∥ {011}GaAs. These results can be well explained upon matching the unit cells of Co2GaAs and GaAs. Upon the annealing at 600°C, the Co2GaAs phase is usually decomposed to stable binary phases, CoGa and CoAs.

Original languageEnglish
Pages (from-to)159-164
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume399
Publication statusPublished - 1996 Jan 1

Fingerprint

Microstructural evolution
Thin films
Cobalt
Substrates
cobalt
thin films
Annealing
annealing
Surface chemistry
Epitaxial growth
Energy dispersive spectroscopy
Evaporation
evaporation
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
microstructure
Microstructure
cells
diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{803c115fdf0d4602a59304eb0f01dc74,
title = "Microstructural evolution of Co2GaAs thin film on GaAs substrate",
abstract = "Interfacial reactions and epitaxial growth of the microstructure between cobalt thin film and (100)-oriented GaAs substrate have been studied, using X-ray diffraction, transmission electron microscopy and EDS analysis. Cobalt thin films were deposited by e-beam evaporation, and were subsequently annealed at 400 °C. The reaction layer evolved due to the annealing was identified as the ternary phase, Co2GaAs, that was grown epitaxially on the substrate. The new orientation relationship between Co2GaAs and GaAs substrate was found as 〈110〉Co2GaAs ∥ 〈100〉GaAs and {001}Co2GaAs ∥ {011}GaAs. These results can be well explained upon matching the unit cells of Co2GaAs and GaAs. Upon the annealing at 600°C, the Co2GaAs phase is usually decomposed to stable binary phases, CoGa and CoAs.",
author = "Shin, {D. W.} and Park, {C. G.} and Kwak, {J. S.} and Baik, {Hong Koo}",
year = "1996",
month = "1",
day = "1",
language = "English",
volume = "399",
pages = "159--164",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Microstructural evolution of Co2GaAs thin film on GaAs substrate. / Shin, D. W.; Park, C. G.; Kwak, J. S.; Baik, Hong Koo.

In: Materials Research Society Symposium - Proceedings, Vol. 399, 01.01.1996, p. 159-164.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Microstructural evolution of Co2GaAs thin film on GaAs substrate

AU - Shin, D. W.

AU - Park, C. G.

AU - Kwak, J. S.

AU - Baik, Hong Koo

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Interfacial reactions and epitaxial growth of the microstructure between cobalt thin film and (100)-oriented GaAs substrate have been studied, using X-ray diffraction, transmission electron microscopy and EDS analysis. Cobalt thin films were deposited by e-beam evaporation, and were subsequently annealed at 400 °C. The reaction layer evolved due to the annealing was identified as the ternary phase, Co2GaAs, that was grown epitaxially on the substrate. The new orientation relationship between Co2GaAs and GaAs substrate was found as 〈110〉Co2GaAs ∥ 〈100〉GaAs and {001}Co2GaAs ∥ {011}GaAs. These results can be well explained upon matching the unit cells of Co2GaAs and GaAs. Upon the annealing at 600°C, the Co2GaAs phase is usually decomposed to stable binary phases, CoGa and CoAs.

AB - Interfacial reactions and epitaxial growth of the microstructure between cobalt thin film and (100)-oriented GaAs substrate have been studied, using X-ray diffraction, transmission electron microscopy and EDS analysis. Cobalt thin films were deposited by e-beam evaporation, and were subsequently annealed at 400 °C. The reaction layer evolved due to the annealing was identified as the ternary phase, Co2GaAs, that was grown epitaxially on the substrate. The new orientation relationship between Co2GaAs and GaAs substrate was found as 〈110〉Co2GaAs ∥ 〈100〉GaAs and {001}Co2GaAs ∥ {011}GaAs. These results can be well explained upon matching the unit cells of Co2GaAs and GaAs. Upon the annealing at 600°C, the Co2GaAs phase is usually decomposed to stable binary phases, CoGa and CoAs.

UR - http://www.scopus.com/inward/record.url?scp=0029723471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029723471&partnerID=8YFLogxK

M3 - Conference article

VL - 399

SP - 159

EP - 164

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -