Microstructural innovation of ni germanide on ge-on-si substrate by using palladium incorporation

Ying Ying Zhang, Chel Jong Choi, Jungwoo Oh, In Shik Han, Shi Guang Li, Kee Young Park, Hong Sik Shin, Ga Won Lee, Jin Suk Wang, Prashant Majhi, Raj Jammy, Hi Deok Lee

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10 Citations (Scopus)

Abstract

In this article, thermally stable Ni germanide using palladium (Pd) incorporation is proposed for high performance germanium metal-oxide- semiconductor field-effect transistors, and a microstructural analysis of the Ni germanide is performed in depth. The proposed Pd/Ni/TiN structure exhibited a stable sheet resistance despite high temperature postgermanidation annealing of up to 500°C for 30 min. The cause of the improved thermal stability is determined to be caused by the pileup of Pd atoms at the bottom region of NiGe, which resulted in the retardation of NiGe agglomeration by the formation of PdGe or NiPdGe there.

Original languageEnglish
Pages (from-to)H402-H404
JournalElectrochemical and Solid-State Letters
Volume12
Issue number11
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Zhang, Y. Y., Choi, C. J., Oh, J., Han, I. S., Li, S. G., Park, K. Y., Shin, H. S., Lee, G. W., Wang, J. S., Majhi, P., Jammy, R., & Lee, H. D. (2009). Microstructural innovation of ni germanide on ge-on-si substrate by using palladium incorporation. Electrochemical and Solid-State Letters, 12(11), H402-H404. https://doi.org/10.1149/1.3202407