Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Seongheum Choi, Jinyong Kim, Juyun Choi, Sungkil Cho, Minhyeong Lee, Eunjung Ko, Il Cheol Rho, Choon Hwan Kim, Yunseok Kim, Dae Hong Ko, Hyoungsub Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalMicroelectronic Engineering
Volume165
DOIs
Publication statusPublished - 2016 Nov 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Choi, S., Kim, J., Choi, J., Cho, S., Lee, M., Ko, E., Rho, I. C., Kim, C. H., Kim, Y., Ko, D. H., & Kim, H. (2016). Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer. Microelectronic Engineering, 165, 1-5. https://doi.org/10.1016/j.mee.2016.08.003