As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.
Bibliographical noteFunding Information:
This work was supported by the research project funded by SK Hynix, Inc. This work was also partially supported by the Nano Material Technology Development Program (grant no. NRF-2015M3A7B7045490 ) and Basic Science Research program (grant no. NRF-2014R1A4A1008474 ) through the National Research Foundation of Korea funded by the Ministry of Education and Ministry of Science, ICT & Future Planning .
© 2016 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering