Abstract
As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 165 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Choi, S., Kim, J., Choi, J., Cho, S., Lee, M., Ko, E., Rho, I. C., Kim, C. H., Kim, Y., Ko, D. H., & Kim, H. (2016). Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer. Microelectronic Engineering, 165, 1-5. https://doi.org/10.1016/j.mee.2016.08.003