Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Seongheum Choi, Jinyong Kim, Juyun Choi, Sungkil Cho, Minhyeong Lee, Eunjung Ko, Il Cheol Rho, Choon Hwan Kim, Yunseok Kim, Dae Hong Ko, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalMicroelectronic Engineering
Volume165
DOIs
Publication statusPublished - 2016 Nov 1

Bibliographical note

Funding Information:
This work was supported by the research project funded by SK Hynix, Inc. This work was also partially supported by the Nano Material Technology Development Program (grant no. NRF-2015M3A7B7045490 ) and Basic Science Research program (grant no. NRF-2014R1A4A1008474 ) through the National Research Foundation of Korea funded by the Ministry of Education and Ministry of Science, ICT & Future Planning .

Publisher Copyright:
© 2016 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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