Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics

Mir Im, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

KTiNbO5 (KTN) and K3Ti5NbO14 (3K5TN) ceramics sintered at 1150 C and 1125 C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (εr) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 C. The 3K5TN ceramics sintered at 1125 C showed an εr of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their εr and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K+ ions between the layers could be responsible for their low resistivity and LFD.

Original languageEnglish
Pages (from-to)5861-5867
Number of pages7
JournalCeramics International
Volume40
Issue number4
DOIs
Publication statusPublished - 2014 May 1

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Dielectric losses
Dielectric properties
Grain growth
Permittivity
Sintering
Ions
Microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Im, Mir ; Kweon, Sang Hyo ; Kim, Jin Seong ; Nahm, Sahn ; Choi, Ji Won ; Hwang, Seong Ju. / Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics. In: Ceramics International. 2014 ; Vol. 40, No. 4. pp. 5861-5867.
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abstract = "KTiNbO5 (KTN) and K3Ti5NbO14 (3K5TN) ceramics sintered at 1150 C and 1125 C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96{\%} of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (εr) of 13 and a dielectric loss of 2.9{\%} at 10 MHz were obtained from KTN ceramics sintered at 1150 C. The 3K5TN ceramics sintered at 1125 C showed an εr of 15 and a dielectric loss of 12{\%} at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their εr and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K+ ions between the layers could be responsible for their low resistivity and LFD.",
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Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics. / Im, Mir; Kweon, Sang Hyo; Kim, Jin Seong; Nahm, Sahn; Choi, Ji Won; Hwang, Seong Ju.

In: Ceramics International, Vol. 40, No. 4, 01.05.2014, p. 5861-5867.

Research output: Contribution to journalArticle

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T1 - Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics

AU - Im, Mir

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

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AB - KTiNbO5 (KTN) and K3Ti5NbO14 (3K5TN) ceramics sintered at 1150 C and 1125 C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (εr) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 C. The 3K5TN ceramics sintered at 1125 C showed an εr of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their εr and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K+ ions between the layers could be responsible for their low resistivity and LFD.

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