Microstructure analyses of the titanium films formed by the ionized sputtering process

Dae Hong Ko, Eun Ha Kim, Siyoung Choi, Bong Young Yoo, Hyeon Deok Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.

Original languageEnglish
Pages (from-to)13-17
Number of pages5
JournalThin Solid Films
Volume340
Issue number1
DOIs
Publication statusPublished - 1999 Feb 26

Fingerprint

Titanium
Sputtering
titanium
sputtering
microstructure
Microstructure
textures
Textures
Substrates
Ion bombardment
Silicon wafers
bombardment
interlayers
Single crystals
wafers
single crystals
silicon
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ko, Dae Hong ; Kim, Eun Ha ; Choi, Siyoung ; Yoo, Bong Young ; Lee, Hyeon Deok. / Microstructure analyses of the titanium films formed by the ionized sputtering process. In: Thin Solid Films. 1999 ; Vol. 340, No. 1. pp. 13-17.
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Microstructure analyses of the titanium films formed by the ionized sputtering process. / Ko, Dae Hong; Kim, Eun Ha; Choi, Siyoung; Yoo, Bong Young; Lee, Hyeon Deok.

In: Thin Solid Films, Vol. 340, No. 1, 26.02.1999, p. 13-17.

Research output: Contribution to journalArticle

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AB - We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.

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