Microstructure analyses of the titanium films formed by the ionized sputtering process

Dae Hong Ko; Eun Ha Kim; Siyoung Choi; Bong Young Yoo; Hyeon Deok Lee

doi:10.1016/S0040-6090(98)01428-X

Microstructure analyses of the titanium films formed by the ionized sputtering process

Dae Hong Ko, Eun Ha Kim, Siyoung Choi, Bong Young Yoo, Hyeon Deok Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.

Original language	English
Pages (from-to)	13-17
Number of pages	5
Journal	Thin Solid Films
Volume	340
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(98)01428-X
Publication status	Published - 1999 Feb 26

Bibliographical note

Funding Information:
The authors would like to acknowledge the financial support of Samsung Electronics Co., Ltd.. We also thank Professor Robert Sinclair at Stanford University for allowing access to the transmission electron microscope at Stanford University.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Microstructure analyses of the titanium films formed by the ionized sputtering process",

abstract = "We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.",

author = "Ko, {Dae Hong} and Kim, {Eun Ha} and Siyoung Choi and Yoo, {Bong Young} and Lee, {Hyeon Deok}",

note = "Funding Information: The authors would like to acknowledge the financial support of Samsung Electronics Co., Ltd.. We also thank Professor Robert Sinclair at Stanford University for allowing access to the transmission electron microscope at Stanford University. ",

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AU - Ko, Dae Hong

AU - Kim, Eun Ha

AU - Choi, Siyoung

AU - Yoo, Bong Young

AU - Lee, Hyeon Deok

N1 - Funding Information: The authors would like to acknowledge the financial support of Samsung Electronics Co., Ltd.. We also thank Professor Robert Sinclair at Stanford University for allowing access to the transmission electron microscope at Stanford University.

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