Abstract
We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.
| Original language | English |
|---|---|
| Pages (from-to) | 13-17 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 340 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Feb 26 |
Bibliographical note
Funding Information:The authors would like to acknowledge the financial support of Samsung Electronics Co., Ltd.. We also thank Professor Robert Sinclair at Stanford University for allowing access to the transmission electron microscope at Stanford University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry