Abstract
We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.
| Original language | English |
|---|---|
| Pages (from-to) | 13-17 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 340 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Feb 26 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Microstructure analyses of the titanium films formed by the ionized sputtering process. / Ko, Dae Hong; Kim, Eun Ha; Choi, Siyoung; Yoo, Bong Young; Lee, Hyeon Deok.
In: Thin Solid Films, Vol. 340, No. 1, 26.02.1999, p. 13-17.Research output: Contribution to journal › Article
TY - JOUR
T1 - Microstructure analyses of the titanium films formed by the ionized sputtering process
AU - Ko, Dae Hong
AU - Kim, Eun Ha
AU - Choi, Siyoung
AU - Yoo, Bong Young
AU - Lee, Hyeon Deok
PY - 1999/2/26
Y1 - 1999/2/26
N2 - We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.
AB - We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.
UR - http://www.scopus.com/inward/record.url?scp=0032651603&partnerID=8YFLogxK
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U2 - 10.1016/S0040-6090(98)01428-X
DO - 10.1016/S0040-6090(98)01428-X
M3 - Article
VL - 340
SP - 13
EP - 17
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -