Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2 Si substrates by high-resolution transmission electron microscopy

Tae Sik Yoon, Hyun Mi Kim, Ki Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, Ya Hong Xie

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6 Citations (Scopus)

Abstract

The microstructure of epitaxially grown self-assembled Ge islands on patterned SiO2 Si substrates was analyzed using high resolution transmission electron microscopy. The Ge islands were grown by molecular beam epitaxy on hexagonally ordered Si hole arrays with ∼25 nm diameter and ∼40 nm center-to-center distance, which are covered by 30 nm thick SiO2 mask layer patterned using self-assembled diblock copolymers. The Ge islands nucleate preferentially at the edge of overetched Si surface, and subsequently grow selectively on Si surface as opposed to SiO2 surface with increasing coverage. The lattice planes of some Ge islands are tilted from those of Si substrates. This is believed to be the reason for the observed misalignment of moiŕ fringes. The diameter of the Ge islands is identical to that of Si holes for large Ge coverage due to the selective growth behavior. These islands are found to have dislocations at the interface with the Si substrate. These results highlight the important microstructural issues and growth behavior of quantum dots on patterned substrates.

Original languageEnglish
Article number104306
JournalJournal of Applied Physics
Volume102
Issue number10
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
The authors acknowledge the support of the Microelectronic Advanced Research Corporation (MARCO) and its Focus Center on Functional Engineered Nano Architectonics (FENA). This work was supported from the National Program for Tera-level Nano Devices, one of the 21st Century Frontier R&D Programs funded by the Korean Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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