Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy

Jang Hyuk Hong, Tae Hyoung Moon, Jae Min Myoung

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

HfO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy. Hafnium tetra-butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor for its moderate vapor pressure. The properties of the layers were evaluated by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As the O 2 flow rate increased, XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer. The excess oxygen at higher oxygen flow rate contributed to increase the density of trapped charges, however, the dielectric constant was increased as the oxygen flow rate increased. The microstructure observed from the TEM images indicates that the grown layer was polycrystalline, and XRD analysis reveals that the monoclinic phases are the dominant crystal structure. From the C-V analyses, the dielectric constant k=13-16 and the equivalent oxide thickness (EOT)=43-52 were calculated, and leakage current densities of 2.5-2.7×10-2 A/cm2 were measured at -1.5 V gate voltage from the I-V analyses.

Original languageEnglish
Pages (from-to)263-268
Number of pages6
JournalMicroelectronic Engineering
Volume75
Issue number3
DOIs
Publication statusPublished - 2004 Sep 1

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
microstructure
Microstructure
flow velocity
Flow rate
Electric potential
electric potential
Oxygen
oxygen
x rays
Permittivity
Capacitance
Hafnium
X ray photoelectron spectroscopy
capacitance
photoelectron spectroscopy
permittivity
transmission electron microscopy
hafnium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{ba3a05856af5414184c41fcb18e79fc6,
title = "Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy",
abstract = "HfO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy. Hafnium tetra-butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor for its moderate vapor pressure. The properties of the layers were evaluated by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As the O 2 flow rate increased, XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer. The excess oxygen at higher oxygen flow rate contributed to increase the density of trapped charges, however, the dielectric constant was increased as the oxygen flow rate increased. The microstructure observed from the TEM images indicates that the grown layer was polycrystalline, and XRD analysis reveals that the monoclinic phases are the dominant crystal structure. From the C-V analyses, the dielectric constant k=13-16 and the equivalent oxide thickness (EOT)=43-52 were calculated, and leakage current densities of 2.5-2.7×10-2 A/cm2 were measured at -1.5 V gate voltage from the I-V analyses.",
author = "Hong, {Jang Hyuk} and Moon, {Tae Hyoung} and Myoung, {Jae Min}",
year = "2004",
month = "9",
day = "1",
doi = "10.1016/j.mee.2004.05.008",
language = "English",
volume = "75",
pages = "263--268",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "3",

}

Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy. / Hong, Jang Hyuk; Moon, Tae Hyoung; Myoung, Jae Min.

In: Microelectronic Engineering, Vol. 75, No. 3, 01.09.2004, p. 263-268.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy

AU - Hong, Jang Hyuk

AU - Moon, Tae Hyoung

AU - Myoung, Jae Min

PY - 2004/9/1

Y1 - 2004/9/1

N2 - HfO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy. Hafnium tetra-butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor for its moderate vapor pressure. The properties of the layers were evaluated by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As the O 2 flow rate increased, XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer. The excess oxygen at higher oxygen flow rate contributed to increase the density of trapped charges, however, the dielectric constant was increased as the oxygen flow rate increased. The microstructure observed from the TEM images indicates that the grown layer was polycrystalline, and XRD analysis reveals that the monoclinic phases are the dominant crystal structure. From the C-V analyses, the dielectric constant k=13-16 and the equivalent oxide thickness (EOT)=43-52 were calculated, and leakage current densities of 2.5-2.7×10-2 A/cm2 were measured at -1.5 V gate voltage from the I-V analyses.

AB - HfO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy. Hafnium tetra-butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor for its moderate vapor pressure. The properties of the layers were evaluated by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As the O 2 flow rate increased, XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer. The excess oxygen at higher oxygen flow rate contributed to increase the density of trapped charges, however, the dielectric constant was increased as the oxygen flow rate increased. The microstructure observed from the TEM images indicates that the grown layer was polycrystalline, and XRD analysis reveals that the monoclinic phases are the dominant crystal structure. From the C-V analyses, the dielectric constant k=13-16 and the equivalent oxide thickness (EOT)=43-52 were calculated, and leakage current densities of 2.5-2.7×10-2 A/cm2 were measured at -1.5 V gate voltage from the I-V analyses.

UR - http://www.scopus.com/inward/record.url?scp=4344593858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344593858&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2004.05.008

DO - 10.1016/j.mee.2004.05.008

M3 - Article

VL - 75

SP - 263

EP - 268

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 3

ER -