Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)

Woo Sik Kim; Soon Mok Ha; Sook Yun; Hyung Ho Park

doi:10.1016/S0040-6090(02)00837-4

Microstructure and electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd)

Woo Sik Kim, Soon Mok Ha, Sook Yun, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

44 Citations (Scopus)

Abstract

The effects of microstructure on the electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y₂O₃/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O₂ for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm², Ec = 131 kV/cm for Nd₂Ti₂O₇ film; and Pr = 1.8 μC/cm², Ec = 75.28 kV/cm for La₂Ti₂O₇ film, respectively. C-V characteristics of Ln₂Ti₂O₇/Y₂O₃/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd₂Ti₂O₇ and La₂Ti₂O₇ films with 7 V of applied voltage, respectively.

Original language	English
Pages (from-to)	575-578
Number of pages	4
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00837-4
Publication status	Published - 2002 Dec 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kim, W. S., Ha, S. M., Yun, S., & Park, H. H. (2002). Microstructure and electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd). Thin Solid Films, 420-421, 575-578. https://doi.org/10.1016/S0040-6090(02)00837-4

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abstract = "The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.",

author = "Kim, {Woo Sik} and Ha, {Soon Mok} and Sook Yun and Park, {Hyung Ho}",

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AU - Kim, Woo Sik

AU - Ha, Soon Mok

AU - Yun, Sook

AU - Park, Hyung Ho

PY - 2002/12/2

Y1 - 2002/12/2

N2 - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.

AB - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.

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