Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)

Woo Sik Kim; Soon Mok Ha; Sook Yun; Hyung Ho Park

doi:10.1016/S0040-6090(02)00837-4

Microstructure and electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd)

Woo Sik Kim, Soon Mok Ha, Sook Yun, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

43 Citations (Scopus)

Abstract

The effects of microstructure on the electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y₂O₃/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O₂ for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm², Ec = 131 kV/cm for Nd₂Ti₂O₇ film; and Pr = 1.8 μC/cm², Ec = 75.28 kV/cm for La₂Ti₂O₇ film, respectively. C-V characteristics of Ln₂Ti₂O₇/Y₂O₃/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd₂Ti₂O₇ and La₂Ti₂O₇ films with 7 V of applied voltage, respectively.

Original language	English
Pages (from-to)	575-578
Number of pages	4
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00837-4
Publication status	Published - 2002 Dec 2

Fingerprint

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Kim, W. S., Ha, S. M., Yun, S., & Park, H. H. (2002). Microstructure and electrical properties of Ln₂Ti₂O₇ (Ln=La, Nd). Thin Solid Films, 420-421, 575-578. https://doi.org/10.1016/S0040-6090(02)00837-4

@article{1fe04a4a64f54529bddb8ad2f76fc901,

title = "Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)",

abstract = "The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.",

author = "Kim, {Woo Sik} and Ha, {Soon Mok} and Sook Yun and Park, {Hyung Ho}",

year = "2002",

month = dec,

day = "2",

doi = "10.1016/S0040-6090(02)00837-4",

language = "English",

volume = "420-421",

pages = "575--578",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)

AU - Kim, Woo Sik

AU - Ha, Soon Mok

AU - Yun, Sook

AU - Park, Hyung Ho

PY - 2002/12/2

Y1 - 2002/12/2

N2 - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.

AB - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.

UR - http://www.scopus.com/inward/record.url?scp=17044455922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044455922&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00837-4

DO - 10.1016/S0040-6090(02)00837-4

M3 - Article

AN - SCOPUS:17044455922

VL - 420-421

SP - 575

EP - 578

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Access to Document

10.1016/S0040-6090(02)00837-4