Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)

Woo Sik Kim, Soon Mok Ha, Sook Yun, Hyung Ho Park

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Abstract

The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.

Original languageEnglish
Pages (from-to)575-578
Number of pages4
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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