Abstract
The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 575-578 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 420-421 |
| DOIs | |
| Publication status | Published - 2002 Dec 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd). / Kim, Woo Sik; Ha, Soon Mok; Yun, Sook; Park, Hyung-Ho.
In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 575-578.Research output: Contribution to journal › Article
TY - JOUR
T1 - Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)
AU - Kim, Woo Sik
AU - Ha, Soon Mok
AU - Yun, Sook
AU - Park, Hyung-Ho
PY - 2002/12/2
Y1 - 2002/12/2
N2 - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.
AB - The effects of microstructure on the electrical properties of Ln2Ti2O7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y2O3/Si substrates using the sol-gel and spin-coating method. The films were crystallized at 800 °C in O2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm2, Ec = 131 kV/cm for Nd2Ti2O7 film; and Pr = 1.8 μC/cm2, Ec = 75.28 kV/cm for La2Ti2O7 film, respectively. C-V characteristics of Ln2Ti2O7/Y2O3/Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd2Ti2O7 and La2Ti2O7 films with 7 V of applied voltage, respectively.
UR - http://www.scopus.com/inward/record.url?scp=17044455922&partnerID=8YFLogxK
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U2 - 10.1016/S0040-6090(02)00837-4
DO - 10.1016/S0040-6090(02)00837-4
M3 - Article
AN - SCOPUS:17044455922
VL - 420-421
SP - 575
EP - 578
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -