The microwave dielectric properties of CaTiO3 (CT), MgTiO 3 (MT) and (Mg0.93Ca0.07)TiO3 (MCT) thin films prepared by the metalorganic solution deposition technique were investigated. The well-crystallized CT, MT and MCT thin films were annealed at 800°C. The microwave dielectric properties of the thin films were measured using a circular-patch capacitor geometry with a network analyzer. The dielectric constant (K), dielectric loss (tan δ) and temperature coefficient of dielectric constant (TCK) of CT films measured up to 6 GHz were 160 ± 3, 0.003 ± 0.0003 and -1340 ppm/°C, respectively. In contrast, the MT films showed K ∼ 16 ± 1, tan δ ∼ 0.0008 ± 0.0001 and TCK ∼ +260 ppm/°C. MCT films exhibited microwave dielectric properties of K ∼ 22 ± 1, tan δ ∼ 0.0012 ± 0002 and TCK ∼ +10 ppm/°C.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry