Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique

Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin Ho Shin, Doo Chan Jung, Moo Whan Shin, Chang Seok Kim, Jae Eung Oh, Jung Hee Lee, Sung Ho Hahm

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10-6 Ω cm2 and resulted in a linear I - V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm-1 (at VGS = 1 V), and the transconductance of approximately 68 mS mm-1 (at VGS = -1.1 V, VDS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm-1 at 1.8 GHz for a 1400-μm wide gate device.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume95
Issue number1
DOIs
Publication statusPublished - 2002 Jul 1

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Etching
Microwaves
etching
microwaves
Fabrication
Wet etching
Ohmic contacts
Transconductance
electric contacts
Current density
fabrication
transconductance
direct current
current density
electrical resistivity
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Jong Wook ; Lee, Jae Seung ; Lee, Won Sang ; Shin, Jin Ho ; Jung, Doo Chan ; Shin, Moo Whan ; Kim, Chang Seok ; Oh, Jae Eung ; Lee, Jung Hee ; Hahm, Sung Ho. / Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2002 ; Vol. 95, No. 1. pp. 73-76.
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Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique. / Kim, Jong Wook; Lee, Jae Seung; Lee, Won Sang; Shin, Jin Ho; Jung, Doo Chan; Shin, Moo Whan; Kim, Chang Seok; Oh, Jae Eung; Lee, Jung Hee; Hahm, Sung Ho.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 95, No. 1, 01.07.2002, p. 73-76.

Research output: Contribution to journalArticle

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T1 - Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique

AU - Kim, Jong Wook

AU - Lee, Jae Seung

AU - Lee, Won Sang

AU - Shin, Jin Ho

AU - Jung, Doo Chan

AU - Shin, Moo Whan

AU - Kim, Chang Seok

AU - Oh, Jae Eung

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2002/7/1

Y1 - 2002/7/1

N2 - This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10-6 Ω cm2 and resulted in a linear I - V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm-1 (at VGS = 1 V), and the transconductance of approximately 68 mS mm-1 (at VGS = -1.1 V, VDS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm-1 at 1.8 GHz for a 1400-μm wide gate device.

AB - This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10-6 Ω cm2 and resulted in a linear I - V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm-1 (at VGS = 1 V), and the transconductance of approximately 68 mS mm-1 (at VGS = -1.1 V, VDS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm-1 at 1.8 GHz for a 1400-μm wide gate device.

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