Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique

Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin Ho Shin, Doo Chan Jung, Moo Whan Shin, Chang Seok Kim, Jae Eung Oh, Jung Hee Lee, Sung Ho Hahm

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10-6 Ω cm2 and resulted in a linear I - V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm-1 (at VGS = 1 V), and the transconductance of approximately 68 mS mm-1 (at VGS = -1.1 V, VDS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm-1 at 1.8 GHz for a 1400-μm wide gate device.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
Publication statusPublished - 2002 Jul 1

Bibliographical note

Funding Information:
This work was financially supported from the Ministry of Commerce, Industry, and Energy (# 990-02-03) in Korea.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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