Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique

Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin Ho Shin, Doo Chan Jung, Moo Whan Shin, Chang Seok Kim, Jae Eung Oh, Jung Hee Lee, Sung Ho Hahm

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