Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Jiyeon Kang, Kyeong Ju Moon, Tae Il Lee, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes.

Original languageEnglish
Pages (from-to)3509-3512
Number of pages4
JournalApplied Surface Science
Volume258
Issue number8
DOIs
Publication statusPublished - 2012 Feb 1

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Oxide films
Electromigration
Ions
Electrodes
Organic light emitting diodes (OLED)
Tin oxides
Threshold voltage

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Kang, Jiyeon ; Moon, Kyeong Ju ; Lee, Tae Il ; Lee, Woong ; Myoung, Jae Min. / Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors. In: Applied Surface Science. 2012 ; Vol. 258, No. 8. pp. 3509-3512.
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Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors. / Kang, Jiyeon; Moon, Kyeong Ju; Lee, Tae Il; Lee, Woong; Myoung, Jae Min.

In: Applied Surface Science, Vol. 258, No. 8, 01.02.2012, p. 3509-3512.

Research output: Contribution to journalArticle

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