Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes.
Bibliographical noteFunding Information:
This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology [ R32-20031 ] and the LG Display academic-industrial cooperation program.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films