Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors

Hyo Soon Kang, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.

Original languageEnglish
Title of host publication2006 International Topical Meeting on Microwave Photonics, MWP
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Topical Meeting on Microwave Photonics, MWP - Grenoble, France
Duration: 2006 Oct 32006 Oct 6

Other

Other2006 International Topical Meeting on Microwave Photonics, MWP
CountryFrance
CityGrenoble
Period06/10/306/10/6

Fingerprint

Photodetectors
Millimeter waves
Optoelectronic devices
radio
Metals
Mixer circuits
Fibers
Quadrature amplitude modulation
trend
Bias voltage
performance
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Signal Processing
  • Communication

Cite this

Kang, H. S., & Choi, W. Y. (2006). Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. In 2006 International Topical Meeting on Microwave Photonics, MWP [4153814] https://doi.org/10.1109/MWP.2006.346512
Kang, Hyo Soon ; Choi, Woo Young. / Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. 2006 International Topical Meeting on Microwave Photonics, MWP. 2006.
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Kang, HS & Choi, WY 2006, Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. in 2006 International Topical Meeting on Microwave Photonics, MWP., 4153814, 2006 International Topical Meeting on Microwave Photonics, MWP, Grenoble, France, 06/10/3. https://doi.org/10.1109/MWP.2006.346512

Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. / Kang, Hyo Soon; Choi, Woo Young.

2006 International Topical Meeting on Microwave Photonics, MWP. 2006. 4153814.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.

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Kang HS, Choi WY. Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. In 2006 International Topical Meeting on Microwave Photonics, MWP. 2006. 4153814 https://doi.org/10.1109/MWP.2006.346512