Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Keun Man Song, Seokwoo Lee, Hyungdo Yoon, Jae Hyoun Park, Kyunghwan Oh, Sung Min Hwang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

Original languageEnglish
Pages (from-to)1407-1410
Number of pages4
JournalCurrent Applied Physics
Volume10
Issue number6
DOIs
Publication statusPublished - 2010 Nov 1

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Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
Substrates
Polarization
Organic Chemicals
Organic chemicals
polarization
Full width at half maximum
Quantum efficiency
blue shift
Semiconductor quantum wells
metalorganic chemical vapor deposition
quantum efficiency
Chemical vapor deposition
Anisotropy
templates
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Seo, Y. G., Baik, K. H., Song, K. M., Lee, S., Yoon, H., Park, J. H., ... Hwang, S. M. (2010). Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates. Current Applied Physics, 10(6), 1407-1410. https://doi.org/10.1016/j.cap.2010.05.003
Seo, Yong Gon ; Baik, Kwang Hyeon ; Song, Keun Man ; Lee, Seokwoo ; Yoon, Hyungdo ; Park, Jae Hyoun ; Oh, Kyunghwan ; Hwang, Sung Min. / Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates. In: Current Applied Physics. 2010 ; Vol. 10, No. 6. pp. 1407-1410.
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Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates. / Seo, Yong Gon; Baik, Kwang Hyeon; Song, Keun Man; Lee, Seokwoo; Yoon, Hyungdo; Park, Jae Hyoun; Oh, Kyunghwan; Hwang, Sung Min.

In: Current Applied Physics, Vol. 10, No. 6, 01.11.2010, p. 1407-1410.

Research output: Contribution to journalArticle

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AU - Baik, Kwang Hyeon

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AU - Yoon, Hyungdo

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AU - Oh, Kyunghwan

AU - Hwang, Sung Min

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N2 - Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

AB - Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

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