Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Young Tack Lee, Pyo Jin Jeon, Jae Hyun Han, Jongtae Ahn, Hyo Sun Lee, June Yeong Lim, Won Kook Choi, Jin Dong Song, Min Chul Park, Seongil Im, Do Kyung Hwang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)–2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoropolymer passivation, the ZnO–WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4–3.6 due to the carbon–fluorine (CF) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO–WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D–2D hybrid vdW heterojunction. This approach using a 1D ZnO–2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.

Original languageEnglish
Article number1703822
JournalAdvanced Functional Materials
Volume27
Issue number47
DOIs
Publication statusPublished - 2017 Dec 15

Fingerprint

heterojunction devices
photosensors
Heterojunctions
heterojunctions
diodes
Optoelectronic devices
fluoropolymers
Diodes
rectification
optoelectronic devices
electronics
passivity
emerging
nanowires
pixels
prototypes
dipoles
Nanoscience
Imaging techniques
conduction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Lee, Y. T., Jeon, P. J., Han, J. H., Ahn, J., Lee, H. S., Lim, J. Y., ... Hwang, D. K. (2017). Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors. Advanced Functional Materials, 27(47), [1703822]. https://doi.org/10.1002/adfm.201703822
Lee, Young Tack ; Jeon, Pyo Jin ; Han, Jae Hyun ; Ahn, Jongtae ; Lee, Hyo Sun ; Lim, June Yeong ; Choi, Won Kook ; Song, Jin Dong ; Park, Min Chul ; Im, Seongil ; Hwang, Do Kyung. / Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors. In: Advanced Functional Materials. 2017 ; Vol. 27, No. 47.
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abstract = "2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)–2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoropolymer passivation, the ZnO–WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4–3.6 due to the carbon–fluorine (CF) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO–WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D–2D hybrid vdW heterojunction. This approach using a 1D ZnO–2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.",
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Lee, YT, Jeon, PJ, Han, JH, Ahn, J, Lee, HS, Lim, JY, Choi, WK, Song, JD, Park, MC, Im, S & Hwang, DK 2017, 'Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors', Advanced Functional Materials, vol. 27, no. 47, 1703822. https://doi.org/10.1002/adfm.201703822

Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors. / Lee, Young Tack; Jeon, Pyo Jin; Han, Jae Hyun; Ahn, Jongtae; Lee, Hyo Sun; Lim, June Yeong; Choi, Won Kook; Song, Jin Dong; Park, Min Chul; Im, Seongil; Hwang, Do Kyung.

In: Advanced Functional Materials, Vol. 27, No. 47, 1703822, 15.12.2017.

Research output: Contribution to journalArticle

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T1 - Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

AU - Lee, Young Tack

AU - Jeon, Pyo Jin

AU - Han, Jae Hyun

AU - Ahn, Jongtae

AU - Lee, Hyo Sun

AU - Lim, June Yeong

AU - Choi, Won Kook

AU - Song, Jin Dong

AU - Park, Min Chul

AU - Im, Seongil

AU - Hwang, Do Kyung

PY - 2017/12/15

Y1 - 2017/12/15

N2 - 2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)–2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoropolymer passivation, the ZnO–WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4–3.6 due to the carbon–fluorine (CF) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO–WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D–2D hybrid vdW heterojunction. This approach using a 1D ZnO–2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.

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