SnO2-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO 2 solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO2 ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO2 solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn2+, Mn3+ and Mn4+ states was approved and Sn4+ in Mn:SnO2 ceramics was partially substituted with Mn3+ which contributes p-type behavior. SnO2 substituted with higher contents of Mn3+ of 50% exhibits p-type semiconductor.
Bibliographical noteFunding Information:
This study was supported by KIST (Korea Institute of Science and Technology) Future Resource Program ( 2E21631 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering