The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.
Bibliographical noteFunding Information:
This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R32-20031) and by the LG Display academic industrial cooperation program.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)