Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Jung Han Kang, Edward Namkyu Cho, Chang Eun Kim, Min Jung Lee, Su Jeong Lee, Jae Min Myoung, Ilgu Yun

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Abstract

The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.

Original languageEnglish
Article number222103
JournalApplied Physics Letters
Volume102
Issue number22
DOIs
Publication statusPublished - 2013 Jun 3

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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