Mobility enhancement in ZnO-based TFTs by H treatment

H. S. Bae, J. H. Kim, Seongil Im

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47 Citations (Scopus)

Abstract

ZnO-based thin-film transistors (TFTs) have been fabricated by depositing ZnO (radio-frequency sputtering) on SiO2/p-Si substrates at various temperatures ranging from room temperature to 300°C. When rapid thermal annealing in a forming gas ambient was used for H treatment on ZnO, the TFTs prepared at 200°C exhibited a high field-effect mobility of ∼1.93 cm2/V s but a low on/off current ratio of ∼102 while those fabricated at room temperature showed a low mobility (∼0.2 cm 2/V s) but a high on/off ratio ∼106). The TFT fabricated at 300°C was the most highly conductive among all the TFTs studied but did not show current saturation. We conclude that H treatment on the ZnO channel at a high temperature leads to a high mobility but to a low on/off current ratio.

Original languageEnglish
Pages (from-to)G279-G281
JournalElectrochemical and Solid-State Letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2004

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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