Mobility enhancement in ZnO-based TFTs by H treatment

Research output: Contribution to journalArticle

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Abstract

ZnO-based thin-film transistors (TFTs) have been fabricated by depositing ZnO (radio-frequency sputtering) on SiO2/p-Si substrates at various temperatures ranging from room temperature to 300°C. When rapid thermal annealing in a forming gas ambient was used for H treatment on ZnO, the TFTs prepared at 200°C exhibited a high field-effect mobility of ∼1.93 cm2/V s but a low on/off current ratio of ∼102 while those fabricated at room temperature showed a low mobility (∼0.2 cm 2/V s) but a high on/off ratio ∼106). The TFT fabricated at 300°C was the most highly conductive among all the TFTs studied but did not show current saturation. We conclude that H treatment on the ZnO channel at a high temperature leads to a high mobility but to a low on/off current ratio.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2004 Dec 17

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Thin film transistors
transistors
augmentation
thin films
Temperature
Rapid thermal annealing
room temperature
Sputtering
radio frequencies
Gases
sputtering
saturation
annealing
Substrates
gases
temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

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abstract = "ZnO-based thin-film transistors (TFTs) have been fabricated by depositing ZnO (radio-frequency sputtering) on SiO2/p-Si substrates at various temperatures ranging from room temperature to 300°C. When rapid thermal annealing in a forming gas ambient was used for H treatment on ZnO, the TFTs prepared at 200°C exhibited a high field-effect mobility of ∼1.93 cm2/V s but a low on/off current ratio of ∼102 while those fabricated at room temperature showed a low mobility (∼0.2 cm 2/V s) but a high on/off ratio ∼106). The TFT fabricated at 300°C was the most highly conductive among all the TFTs studied but did not show current saturation. We conclude that H treatment on the ZnO channel at a high temperature leads to a high mobility but to a low on/off current ratio.",
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Mobility enhancement in ZnO-based TFTs by H treatment. / Bae, H. S.; Kim, Jae Hoon; Im, Seongil.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 11, 17.12.2004.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mobility enhancement in ZnO-based TFTs by H treatment

AU - Bae, H. S.

AU - Kim, Jae Hoon

AU - Im, Seongil

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AB - ZnO-based thin-film transistors (TFTs) have been fabricated by depositing ZnO (radio-frequency sputtering) on SiO2/p-Si substrates at various temperatures ranging from room temperature to 300°C. When rapid thermal annealing in a forming gas ambient was used for H treatment on ZnO, the TFTs prepared at 200°C exhibited a high field-effect mobility of ∼1.93 cm2/V s but a low on/off current ratio of ∼102 while those fabricated at room temperature showed a low mobility (∼0.2 cm 2/V s) but a high on/off ratio ∼106). The TFT fabricated at 300°C was the most highly conductive among all the TFTs studied but did not show current saturation. We conclude that H treatment on the ZnO channel at a high temperature leads to a high mobility but to a low on/off current ratio.

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