ZnO-based thin-film transistors (TFTs) have been fabricated by depositing ZnO (radio-frequency sputtering) on SiO2/p-Si substrates at various temperatures ranging from room temperature to 300°C. When rapid thermal annealing in a forming gas ambient was used for H treatment on ZnO, the TFTs prepared at 200°C exhibited a high field-effect mobility of ∼1.93 cm2/V s but a low on/off current ratio of ∼102 while those fabricated at room temperature showed a low mobility (∼0.2 cm 2/V s) but a high on/off ratio ∼106). The TFT fabricated at 300°C was the most highly conductive among all the TFTs studied but did not show current saturation. We conclude that H treatment on the ZnO channel at a high temperature leads to a high mobility but to a low on/off current ratio.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2004|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering