Mode tunable p-type Si nanowire transistor based zero drive load logic inverter

Kyeong Ju Moon, Tae Il Lee, Sang Hoon Lee, Young Uk Han, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

2 Citations (Scopus)


A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V DD of -20 V was successfully fabricated on a substrate.

Original languageEnglish
Pages (from-to)7307-7309
Number of pages3
JournalChemical Communications
Issue number58
Publication statusPublished - 2012 Jul 25


All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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