Model-based breakdown of resist and mask contributions to local CDU for sub-30-nm contact holes in EUV lithography

Insung Kim, Changmin Park, Myeongsu Hwang, Jeong Ho Yeo, Jae Won Hahn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The resist and mask contributions to the local critical dimension uniformity (L.CDU) of 30-nm contact holes (CHs) printed using extreme ultra-violet lithography (EUVL) are decomposed quantitatively by three independent budget breakdown methods. An asymptotic behavior model is proposed for the prediction of the resist-only contribution via a shifted and averaged multiple exposure (SAME) method that statistically averages out the collective mask local contributions. The other two budget breakdown methods of assessing, the variance of site-to-site difference for the derivation of resist-only contribution and the global mask error enhancement factor (G.MEEF) for the mask-only contribution, are performed and compared to the resist and mask contributions from the SAME method. The three budget breakdown methods consistently indicate that approximately 75-80% of L.CDU is attributed to the resist and process regardless of the process conditions, such as post exposure bake (PEB) temperature, PEB time, and exposure dose. L.CDU exhibits a linear correlation with 1/sqrt(dose), which is a potential indication that photon shot noise (PSN) could be a key contributor to the L.CDU on a wafer. Although a significant reduction of the total L.CDU is observed in the low PEB temperature process, i.e., high exposure dose, a relatively small change in the ratio of the resist-to-mask contribution may be observed because the chemical contrast enhancement by acid diffusion reduction is relatively small compared to PSN reduction.

Original languageEnglish
Pages (from-to)48-53
Number of pages6
JournalMicroelectronic Engineering
Volume123
DOIs
Publication statusPublished - 2014 Jul 1

Fingerprint

Extreme ultraviolet lithography
Masks
electric contacts
masks
lithography
breakdown
Shot noise
budgets
shot noise
dosage
Photons
Noise abatement
augmentation
photons
noise reduction
indication
derivation
Temperature
wafers
Acids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Model-based breakdown of resist and mask contributions to local CDU for sub-30-nm contact holes in EUV lithography",
abstract = "The resist and mask contributions to the local critical dimension uniformity (L.CDU) of 30-nm contact holes (CHs) printed using extreme ultra-violet lithography (EUVL) are decomposed quantitatively by three independent budget breakdown methods. An asymptotic behavior model is proposed for the prediction of the resist-only contribution via a shifted and averaged multiple exposure (SAME) method that statistically averages out the collective mask local contributions. The other two budget breakdown methods of assessing, the variance of site-to-site difference for the derivation of resist-only contribution and the global mask error enhancement factor (G.MEEF) for the mask-only contribution, are performed and compared to the resist and mask contributions from the SAME method. The three budget breakdown methods consistently indicate that approximately 75-80{\%} of L.CDU is attributed to the resist and process regardless of the process conditions, such as post exposure bake (PEB) temperature, PEB time, and exposure dose. L.CDU exhibits a linear correlation with 1/sqrt(dose), which is a potential indication that photon shot noise (PSN) could be a key contributor to the L.CDU on a wafer. Although a significant reduction of the total L.CDU is observed in the low PEB temperature process, i.e., high exposure dose, a relatively small change in the ratio of the resist-to-mask contribution may be observed because the chemical contrast enhancement by acid diffusion reduction is relatively small compared to PSN reduction.",
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Model-based breakdown of resist and mask contributions to local CDU for sub-30-nm contact holes in EUV lithography. / Kim, Insung; Park, Changmin; Hwang, Myeongsu; Yeo, Jeong Ho; Hahn, Jae Won.

In: Microelectronic Engineering, Vol. 123, 01.07.2014, p. 48-53.

Research output: Contribution to journalArticle

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