Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

G. L. Bilbro, M. W. Shin, R. J. Trew, A. N. Riddle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

Original languageEnglish
Title of host publicationProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors Anon
PublisherPubl by IEEE
Pages458-467
Number of pages10
ISBN (Print)0780308948
Publication statusPublished - 1993 Dec 1

Publication series

NameProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Bilbro, G. L., Shin, M. W., Trew, R. J., & Riddle, A. N. (1993). Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 458-467). (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits). Publ by IEEE.