Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

G. L. Bilbro, M. W. Shin, R. J. Trew, A. N. Riddle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

Original languageEnglish
Title of host publicationProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors Anon
PublisherPubl by IEEE
Pages458-467
Number of pages10
ISBN (Print)0780308948
Publication statusPublished - 1993 Dec 1

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Spurious signal noise
Resonant circuits
Silicon carbide
Diamonds
Chemical activation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Bilbro, G. L., Shin, M. W., Trew, R. J., & Riddle, A. N. (1993). Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 458-467). Publ by IEEE.
Bilbro, G. L. ; Shin, M. W. ; Trew, R. J. ; Riddle, A. N. / Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. editor / Anon. Publ by IEEE, 1993. pp. 458-467
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Bilbro, GL, Shin, MW, Trew, RJ & Riddle, AN 1993, Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. in Anon (ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Publ by IEEE, pp. 458-467.

Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. / Bilbro, G. L.; Shin, M. W.; Trew, R. J.; Riddle, A. N.

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. ed. / Anon. Publ by IEEE, 1993. p. 458-467.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Bilbro GL, Shin MW, Trew RJ, Riddle AN. Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. In Anon, editor, Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Publ by IEEE. 1993. p. 458-467