Model-based guard ring structure guideline for the enhancement of silicon-based single-photon avalanche diode characteristics

Dongseok Shin, Byungchoul Park, Youngcheol Chae, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single photon avalanche diodes (SPADs) manufactured through the standard CMOS process have a major advantage in reducing the cost and expendability in comparison with the SPAD made with the custom process. SPAD is a single photon sensitive diode using the avalanche phenomenon and operated in Geiger-mode which applies a voltage higher than the breakdown voltage of the device. Therefore, SPAD is exposed to a higher voltage than other devices and has a high electric field in the multiplication region. In SPAD operating with such a high electric field, the guard ring prevents edge breakdown and serves to focus the electric field on the intended multiplication region. Therefore, the optimized guard ring structure is required for the high efficiency SPAD designs. The deep virtual guard ring is designed to cope with deeper multiplication regions formed by deep n-well and p-well, thus providing higher photon detection probability (PDP) and enhanced response at a longer wavelength. In this paper, the four possible Silicon-based SPAD candidates of different deep virtual guard rings formed by the combination of shallow trench isolation (STI) and p-substrate layer fabricated through standard CMOS process are investigated and their electric characteristics of the SPAD, such as the current-voltage (I-V) characteristic, and optical characteristics, such as dark count rate (DCR), and PDP, are measured. In addition, TCAD simulations are used to verify the characteristic variation by analyzing the electric field profiles. Based on the results, the optimized structure of the SPAD with the deep virtual guard ring can be proposed.

Original languageEnglish
Title of host publicationSilicon Photonics XV
EditorsGraham T. Reed, Andrew P. Knights
PublisherSPIE
ISBN (Electronic)9781510633339
DOIs
Publication statusPublished - 2020
EventSilicon Photonics XV 2020 - San Francisco, United States
Duration: 2020 Feb 32020 Feb 6

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11285
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSilicon Photonics XV 2020
CountryUnited States
CitySan Francisco
Period20/2/320/2/6

Bibliographical note

Funding Information:
This work was supported by Industrial Strategic Technology Development Program (No. 10063436) funded by Ministry of Trade, Industry and Energy (MOTIE, Korea).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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