We have presented both modeling and a method for extracting parasitic thermal conductance as well as intrinsic device parameters of a thermoelectric module based on information readily available in vendor datasheets. An equivalent circuit model that is compatible with circuit simulators is derived, followed by a methodology for extracting both intrinsic and parasitic model parameters. For the first time, the effective thermal resistance of the ceramic and copper interconnect layers of the thermoelectric module is extracted using only parameters listed in vendor datasheets. In the experimental condition, including under condition of varying electric current, the parameters extracted from the model accurately reproduce the performance of commercial thermoelectric modules.
Bibliographical notePublisher Copyright:
© 2015, The Minerals, Metals & Materials Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry