Modeling and Extraction of Parasitic Thermal Conductance and Intrinsic Model Parameters of Thermoelectric Modules

Minseob Sim, Hyunbin Park, Shiho Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have presented both modeling and a method for extracting parasitic thermal conductance as well as intrinsic device parameters of a thermoelectric module based on information readily available in vendor datasheets. An equivalent circuit model that is compatible with circuit simulators is derived, followed by a methodology for extracting both intrinsic and parasitic model parameters. For the first time, the effective thermal resistance of the ceramic and copper interconnect layers of the thermoelectric module is extracted using only parameters listed in vendor datasheets. In the experimental condition, including under condition of varying electric current, the parameters extracted from the model accurately reproduce the performance of commercial thermoelectric modules.

Original languageEnglish
Pages (from-to)4473-4481
Number of pages9
JournalJournal of Electronic Materials
Volume44
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

modules
Electric currents
Heat resistance
Equivalent circuits
Copper
thermal resistance
Simulators
electric current
equivalent circuits
simulators
Networks (circuits)
methodology
ceramics
copper
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Modeling and Extraction of Parasitic Thermal Conductance and Intrinsic Model Parameters of Thermoelectric Modules. / Sim, Minseob; Park, Hyunbin; Kim, Shiho.

In: Journal of Electronic Materials, Vol. 44, No. 11, 01.11.2015, p. 4473-4481.

Research output: Contribution to journalArticle

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