Abstract
For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.
| Original language | English |
|---|---|
| Title of host publication | PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 269-272 |
| Number of pages | 4 |
| ISBN (Print) | 9781538653869 |
| DOIs | |
| Publication status | Published - 2018 Aug 8 |
| Event | 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic Duration: 2018 Jul 2 → 2018 Jul 5 |
Other
| Other | 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 |
|---|---|
| Country | Czech Republic |
| City | Prague |
| Period | 18/7/2 → 18/7/5 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
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Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. / Lee, Sang Myung; Yun, Ilgu.
PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc., 2018. p. 269-272 8430321.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications
AU - Lee, Sang Myung
AU - Yun, Ilgu
PY - 2018/8/8
Y1 - 2018/8/8
N2 - For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.
AB - For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.
UR - http://www.scopus.com/inward/record.url?scp=85052519614&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85052519614&partnerID=8YFLogxK
U2 - 10.1109/PRIME.2018.8430321
DO - 10.1109/PRIME.2018.8430321
M3 - Conference contribution
AN - SCOPUS:85052519614
SN - 9781538653869
SP - 269
EP - 272
BT - PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
PB - Institute of Electrical and Electronics Engineers Inc.
ER -