Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications

Sang Myung Lee, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

Original languageEnglish
Title of host publicationPRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages269-272
Number of pages4
ISBN (Print)9781538653869
DOIs
Publication statusPublished - 2018 Aug 8
Event14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic
Duration: 2018 Jul 22018 Jul 5

Other

Other14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
CountryCzech Republic
CityPrague
Period18/7/218/7/5

Fingerprint

Transistors
transistors
Display devices
Thin film transistors
Light emitting diodes
simulation
Computer aided design
light emitting diodes
inorganic materials
computer aided design
thin films
synthesis
products

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Lee, S. M., & Yun, I. (2018). Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics (pp. 269-272). [8430321] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PRIME.2018.8430321
Lee, Sang Myung ; Yun, Ilgu. / Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 269-272
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abstract = "For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.",
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Lee, SM & Yun, I 2018, Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. in PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430321, Institute of Electrical and Electronics Engineers Inc., pp. 269-272, 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018, Prague, Czech Republic, 18/7/2. https://doi.org/10.1109/PRIME.2018.8430321

Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. / Lee, Sang Myung; Yun, Ilgu.

PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc., 2018. p. 269-272 8430321.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee SM, Yun I. Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc. 2018. p. 269-272. 8430321 https://doi.org/10.1109/PRIME.2018.8430321