For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.
|Title of host publication||PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|Publication status||Published - 2018 Aug 8|
|Event||14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic|
Duration: 2018 Jul 2 → 2018 Jul 5
|Name||PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics|
|Other||14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018|
|Period||18/7/2 → 18/7/5|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University. Also, the authors would like to thank J.H. Kim of LG Display for supporting with concept idea.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials