Modeling electrical characteristics for multi-finger MOSFETs based on drain voltage variation

Mingu Kang, Ilgu Yun

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalTransactions on Electrical and Electronic Materials
Volume12
Issue number6
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

MOSFET devices
Electric potential
Transconductance
Threshold voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{f440f6dfb4a24b33b9c12d7fa4aad920,
title = "Modeling electrical characteristics for multi-finger MOSFETs based on drain voltage variation",
abstract = "The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.",
author = "Mingu Kang and Ilgu Yun",
year = "2011",
month = "12",
day = "1",
doi = "10.4313/TEEM.2011.12.6.245",
language = "English",
volume = "12",
pages = "245--248",
journal = "Transactions on Electrical and Electronic Materials",
issn = "1229-7607",
publisher = "The Korean Institute of Electrical and Electronic Material Engineers",
number = "6",

}

Modeling electrical characteristics for multi-finger MOSFETs based on drain voltage variation. / Kang, Mingu; Yun, Ilgu.

In: Transactions on Electrical and Electronic Materials, Vol. 12, No. 6, 01.12.2011, p. 245-248.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modeling electrical characteristics for multi-finger MOSFETs based on drain voltage variation

AU - Kang, Mingu

AU - Yun, Ilgu

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.

AB - The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.

UR - http://www.scopus.com/inward/record.url?scp=84856768581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856768581&partnerID=8YFLogxK

U2 - 10.4313/TEEM.2011.12.6.245

DO - 10.4313/TEEM.2011.12.6.245

M3 - Article

VL - 12

SP - 245

EP - 248

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

SN - 1229-7607

IS - 6

ER -