Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

Myoung Seok Kim, Young Don Ko, Tae Houng Moon, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

Original languageEnglish
Pages (from-to)98-106
Number of pages9
JournalMicroelectronics Journal
Volume37
Issue number2
DOIs
Publication statusPublished - 2006 Feb

Bibliographical note

Funding Information:
This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Assessment)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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