Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

Myoung Seok Kim, Young Don Ko, Tae Houng Moon, Jae Min Myoung, Ilgu Yun

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Abstract

HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

Original languageEnglish
Pages (from-to)98-106
Number of pages9
JournalMicroelectronics Journal
Volume37
Issue number2
DOIs
Publication statusPublished - 2006 Feb 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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