Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

Myoung Seok Kim, Young Don Ko, Tae Houng Moon, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

Original languageEnglish
Pages (from-to)98-106
Number of pages9
JournalMicroelectronics Journal
Volume37
Issue number2
DOIs
Publication statusPublished - 2006 Feb 1

Fingerprint

Molecular beam epitaxy
Flow of gases
molecular beam epitaxy
Hafnium
Gases
Metals
Thin films
Capacitance measurement
Argon
Voltage measurement
Electric potential
Substrates
thin films
High resolution transmission electron microscopy
Leakage currents
metals
gas flow
Permittivity
Current density
Capacitance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kim, Myoung Seok ; Ko, Young Don ; Moon, Tae Houng ; Myoung, Jae Min ; Yun, Ilgu. / Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy. In: Microelectronics Journal. 2006 ; Vol. 37, No. 2. pp. 98-106.
@article{fcdba865273546edb181b84bf7f7f8c7,
title = "Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy",
abstract = "HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.",
author = "Kim, {Myoung Seok} and Ko, {Young Don} and Moon, {Tae Houng} and Myoung, {Jae Min} and Ilgu Yun",
year = "2006",
month = "2",
day = "1",
doi = "10.1016/j.mejo.2005.04.055",
language = "English",
volume = "37",
pages = "98--106",
journal = "Microelectronics Journal",
issn = "0959-8324",
publisher = "Elsevier BV",
number = "2",

}

Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy. / Kim, Myoung Seok; Ko, Young Don; Moon, Tae Houng; Myoung, Jae Min; Yun, Ilgu.

In: Microelectronics Journal, Vol. 37, No. 2, 01.02.2006, p. 98-106.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

AU - Kim, Myoung Seok

AU - Ko, Young Don

AU - Moon, Tae Houng

AU - Myoung, Jae Min

AU - Yun, Ilgu

PY - 2006/2/1

Y1 - 2006/2/1

N2 - HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

AB - HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra- butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O 2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

UR - http://www.scopus.com/inward/record.url?scp=28644441430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28644441430&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.04.055

DO - 10.1016/j.mejo.2005.04.055

M3 - Article

AN - SCOPUS:28644441430

VL - 37

SP - 98

EP - 106

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 2

ER -