The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of uniform current spreading. By means of simple modeling, it was found that the current density and the length of the lateral current path through the transparent layer represent dominant parameters in determining uniform current spreading. In this regard, we studied the effect of current density on the reliability characteristics of the LED. We were able to significantly improve the electrical, optical, and reliability characteristics of the LED in terms of reducing the length of the lateral current path through the transparent layer.
|Number of pages||2|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 Sept 18|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)