Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

J. K. Park, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08/12/808/12/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes'. Together they form a unique fingerprint.

  • Cite this

    Park, J. K., & Yun, I. (2008). Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760679] https://doi.org/10.1109/EDSSC.2008.4760679