Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

J. K. Park; I. Yun

doi:10.1109/EDSSC.2008.4760679

Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

J. K. Park, I. Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760679
Publication status	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 2008 Dec 8 → 2008 Dec 10

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08/12/8 → 08/12/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2008.4760679

Cite this

@inproceedings{5593205f69a44c138874d31fd17e6bc3,

title = "Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes",

abstract = "InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.",

author = "Park, {J. K.} and I. Yun",

year = "2008",

doi = "10.1109/EDSSC.2008.4760679",

language = "English",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Park, JK & Yun, I 2008, Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760679, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/8. https://doi.org/10.1109/EDSSC.2008.4760679

Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes. / Park, J. K.; Yun, I.

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760679 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

AU - Park, J. K.

AU - Yun, I.

PY - 2008

Y1 - 2008

N2 - InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.

AB - InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.

UR - http://www.scopus.com/inward/record.url?scp=63249137108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63249137108&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2008.4760679

DO - 10.1109/EDSSC.2008.4760679

M3 - Conference contribution

AN - SCOPUS:63249137108

SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this