Modeling of electrical conductance variation in substrate during initial growth of ultra thin film

Seok Kyun Song, Hyung Jin Jung, Seok Keun Koh, Hong Koo Baik

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A model of the electrical conductance of a resistive or semiconductive substrate, as a function of the average thickness d of a deposited film in initial growth on the substrate is proposed. The total conductance has two terms: one proportional to d2/3 for three-dimension (3D) growth, and one proportional to d for 2D growth or for increasing number of islands. The model was applied to the conductance of a Sn film deposited on a SiOx substrate showing that the initial growth is dominated by 3D growth. The proposed model may be useful for in situ study of the growth of ultra thin films prior to the onset of tunneling conductance.

Original languageEnglish
Pages (from-to)850-851
Number of pages2
JournalApplied Physics Letters
Volume71
Issue number6
DOIs
Publication statusPublished - 1997 Aug 11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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