Two numerical techniques, the finite difference in time domain (FDTD) and the finite element method (FEM) in frequency domain, are employed to characterize microstrip hermetic transition geometries in an effort to investigate high-frequency effects. Measurements performed on these transitions compare favorably with theory. Two different types of transitions have been analyzed from 10 to 25 GHz and have been found to be limited in performance by higher return loss as frequency increases. It is shown that microstrip-through-CPW hermetic transitions in the shielded environment may suffer from parasitic waveguide modes which, however, can be eliminated with the use of vias at appropriate locations. The hermetic wall on top of the CPW section shows a relatively small (≤ 2 dB) effect on the original circuit performance. Similarly, the hermetic bead transition shows good performance at a lower frequency region while it degrades as frequency increases. This indicates the need for very careful characterization of transitions intended for use in microwave and millimeter-wave applications.
|Number of pages||18|
|Journal||International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering|
|Publication status||Published - 1996 Sep 1|
All Science Journal Classification (ASJC) codes