Modification of H-terminated Ge surface in hydrochloric acid

Kibyung Park, Younghwan Lee, Sangwoo Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Various amounts of H-termination on a Ge surface were prepared by dipping a Ge wafer in differentially diluted hydrofluoric acid solutions for different periods of time. Formation of Ge{single bond}H x in hydrofluoric acid and its disappearance in hydrochloric acid (HCl) were directly measured by using multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR). Peak intensity of Ge{single bond}H x vibration mode was increased with diluted hydrofluoric acid (DHF) treatment time and the concentration of HF solution. Therefore, it is suggested that microroughness of a Ge surface changes depending on the concentration of HF. Peak intensity of Ge{single bond}H x vibration mode was reduced when the Ge{single bond}H x surface was treated in HCl solution. With an increase in HCl treatment time, peak intensity of Ge{single bond}H x vibration mode was reduced. Ge surfaces treated in a more diluted HF solution were barely modified, because it was thought to have fewer kink sites, dihydrides and trihydrides.

Original languageEnglish
Pages (from-to)1842-1846
Number of pages5
JournalApplied Surface Science
Volume254
Issue number6
DOIs
Publication statusPublished - 2008 Jan 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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