Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

Keun Ho Lee, Jee Ho Park, Young Bum Yoo, Sun Woong Han, Se Jong Lee, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, we present a simple process for the fabrication of aqueous-solution-processed metal oxide thin-film transistors (TFTs) via the manipulation of precursor solution temperature. Indium oxide TFTs fabricated from a solution of indium nitrate at 4 °C exhibited the highest mobility of 2.73 cm2/(V·s) at an annealing temperature of 200 °C. When the temperature of the metal oxide precursor solution is 4 °C, metal cations within the solution can be fully surrounded by H2O molecules owing to the high dielectric constant of H2O at low temperatures. These metal complexes are advantageous for the conversion of metal oxides via thermally driven hydrolysis and condensation processes due to their high potential energies. The same techniques have been applied successfully with high-order metal oxides including indium zinc oxide, indium gallium oxide, and indium gallium zinc oxide.

Original languageEnglish
Article number081101
JournalApplied Physics Express
Volume8
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

Fingerprint

Thin film transistors
Indium
Oxide films
metal oxides
transistors
Modulation
indium oxides
aqueous solutions
modulation
Fabrication
gallium oxides
fabrication
thin films
Metals
Oxides
zinc oxides
indium
Gallium
Zinc oxide
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "In this study, we present a simple process for the fabrication of aqueous-solution-processed metal oxide thin-film transistors (TFTs) via the manipulation of precursor solution temperature. Indium oxide TFTs fabricated from a solution of indium nitrate at 4 °C exhibited the highest mobility of 2.73 cm2/(V·s) at an annealing temperature of 200 °C. When the temperature of the metal oxide precursor solution is 4 °C, metal cations within the solution can be fully surrounded by H2O molecules owing to the high dielectric constant of H2O at low temperatures. These metal complexes are advantageous for the conversion of metal oxides via thermally driven hydrolysis and condensation processes due to their high potential energies. The same techniques have been applied successfully with high-order metal oxides including indium zinc oxide, indium gallium oxide, and indium gallium zinc oxide.",
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Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors. / Lee, Keun Ho; Park, Jee Ho; Yoo, Young Bum; Han, Sun Woong; Lee, Se Jong; Baik, Hong Koo.

In: Applied Physics Express, Vol. 8, No. 8, 081101, 01.08.2015.

Research output: Contribution to journalArticle

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AU - Park, Jee Ho

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AU - Han, Sun Woong

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