Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

Keun Ho Lee, Jee Ho Park, Young Bum Yoo, Sun Woong Han, Se Jong Lee, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, we present a simple process for the fabrication of aqueous-solution-processed metal oxide thin-film transistors (TFTs) via the manipulation of precursor solution temperature. Indium oxide TFTs fabricated from a solution of indium nitrate at 4 °C exhibited the highest mobility of 2.73 cm2/(V·s) at an annealing temperature of 200 °C. When the temperature of the metal oxide precursor solution is 4 °C, metal cations within the solution can be fully surrounded by H2O molecules owing to the high dielectric constant of H2O at low temperatures. These metal complexes are advantageous for the conversion of metal oxides via thermally driven hydrolysis and condensation processes due to their high potential energies. The same techniques have been applied successfully with high-order metal oxides including indium zinc oxide, indium gallium oxide, and indium gallium zinc oxide.

Original languageEnglish
Article number081101
JournalApplied Physics Express
Volume8
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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