Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Muhammad Farooq Khan, Shania Rehman, Malik Abdul Rehman, Muhammad Abdul Basit, Deok kee Kim, Faisal Ahmed, H. M.Waseem Khalil, Imtisal Akhtar, Seong Chan Jun

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe2 (SL-MoSe2), and BLG/SL-MoSe2 heterostack SVJs. However, before annealing, BLG and SL-MoSe2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe2/NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe2/Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.

Original languageEnglish
Article number136
JournalNanoscale Research Letters
Volume15
Issue number1
DOIs
Publication statusPublished - 2020

Bibliographical note

Funding Information:
This research was supported by Nano Material Technology Development Program (NRF-2017M3A7B4041987) and the Korean Government (MSIP) (no. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning. This study was also supported by the basic research program under the project (2020R1G1A1012022) through the National Research Foundation (NRF) of South Korea. Acknowledgements

Publisher Copyright:
© 2020, The Author(s).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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