Modulation of optoelectronic properties of the Bi2Te3 nanowire by controlling the formation of selective surface oxidation

Kwangsik Jeong; Dambi Park; Inhee Maeng; Dajung Kim; Hoedon Kwon; Chul Kang; Mann Ho Cho

doi:10.1016/j.apsusc.2021.149069

Modulation of optoelectronic properties of the Bi₂Te₃ nanowire by controlling the formation of selective surface oxidation

Kwangsik Jeong, Dambi Park, Inhee Maeng, Dajung Kim, Hoedon Kwon, Chul Kang, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, a native oxide layer was transformed from TeO₂ into Bi₂O₃ on Bi₂Te₃ by changing the annealing temperature, and the change in the effects of the interface between the oxide layers and Bi₂Te₃ nanowire (NW) was studied. Caused by the change in the surface oxide layer, the change in the interface between the Bi₂Te₃ NW and oxide layer depending on the annealing temperature alters the band-alignment and charge states of defects, which significantly modulates the carrier dynamics (optical excitation and recombination processes) at the interface. Because of the trap/de-trap processes at a defect of the Bi₂Te₃/TeO₂ interface, the photoresponse of the Bi₂Te₃/TeO₂ system shows the defect-induced photogating effect, whereas the photoresponse of the Bi₂Te₃/Bi₂O₃ system shows a capacitive response without trap/de-trap processes. The systematic analysis of the effects of the surface oxidation and related defects on the photoresponse of TIs gives insight into TI-related photodetector devices and their properties under various conditions. Finally, a simple method for controlling the oxidation of the surface and accompanied interface properties such as the valance band offset (VBO), conduction band offset (CBO), and trap/de-trap processes, which can directly affect the operation of TI-based photodetector devices, is proposed.

Original language	English
Article number	149069
Journal	Applied Surface Science
Volume	548
DOIs	https://doi.org/10.1016/j.apsusc.2021.149069
Publication status	Published - 2021 May 15

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214 and 2017R1A5A1014862). This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2021. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM.

Publisher Copyright:
© 2021 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2021.149069

Cite this

@article{a87aff5ad80b4b8bb3312deed14f6271,

title = "Modulation of optoelectronic properties of the Bi2Te3 nanowire by controlling the formation of selective surface oxidation",

abstract = "In this study, a native oxide layer was transformed from TeO2 into Bi2O3 on Bi2Te3 by changing the annealing temperature, and the change in the effects of the interface between the oxide layers and Bi2Te3 nanowire (NW) was studied. Caused by the change in the surface oxide layer, the change in the interface between the Bi2Te3 NW and oxide layer depending on the annealing temperature alters the band-alignment and charge states of defects, which significantly modulates the carrier dynamics (optical excitation and recombination processes) at the interface. Because of the trap/de-trap processes at a defect of the Bi2Te3/TeO2 interface, the photoresponse of the Bi2Te3/TeO2 system shows the defect-induced photogating effect, whereas the photoresponse of the Bi2Te3/Bi2O3 system shows a capacitive response without trap/de-trap processes. The systematic analysis of the effects of the surface oxidation and related defects on the photoresponse of TIs gives insight into TI-related photodetector devices and their properties under various conditions. Finally, a simple method for controlling the oxidation of the surface and accompanied interface properties such as the valance band offset (VBO), conduction band offset (CBO), and trap/de-trap processes, which can directly affect the operation of TI-based photodetector devices, is proposed.",

author = "Kwangsik Jeong and Dambi Park and Inhee Maeng and Dajung Kim and Hoedon Kwon and Chul Kang and Cho, {Mann Ho}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214 and 2017R1A5A1014862). This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2021. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

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AU - Jeong, Kwangsik

AU - Park, Dambi

AU - Maeng, Inhee

AU - Kim, Dajung

AU - Kwon, Hoedon

AU - Kang, Chul

AU - Cho, Mann Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214 and 2017R1A5A1014862). This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2021. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/5/15

Y1 - 2021/5/15

N2 - In this study, a native oxide layer was transformed from TeO2 into Bi2O3 on Bi2Te3 by changing the annealing temperature, and the change in the effects of the interface between the oxide layers and Bi2Te3 nanowire (NW) was studied. Caused by the change in the surface oxide layer, the change in the interface between the Bi2Te3 NW and oxide layer depending on the annealing temperature alters the band-alignment and charge states of defects, which significantly modulates the carrier dynamics (optical excitation and recombination processes) at the interface. Because of the trap/de-trap processes at a defect of the Bi2Te3/TeO2 interface, the photoresponse of the Bi2Te3/TeO2 system shows the defect-induced photogating effect, whereas the photoresponse of the Bi2Te3/Bi2O3 system shows a capacitive response without trap/de-trap processes. The systematic analysis of the effects of the surface oxidation and related defects on the photoresponse of TIs gives insight into TI-related photodetector devices and their properties under various conditions. Finally, a simple method for controlling the oxidation of the surface and accompanied interface properties such as the valance band offset (VBO), conduction band offset (CBO), and trap/de-trap processes, which can directly affect the operation of TI-based photodetector devices, is proposed.

AB - In this study, a native oxide layer was transformed from TeO2 into Bi2O3 on Bi2Te3 by changing the annealing temperature, and the change in the effects of the interface between the oxide layers and Bi2Te3 nanowire (NW) was studied. Caused by the change in the surface oxide layer, the change in the interface between the Bi2Te3 NW and oxide layer depending on the annealing temperature alters the band-alignment and charge states of defects, which significantly modulates the carrier dynamics (optical excitation and recombination processes) at the interface. Because of the trap/de-trap processes at a defect of the Bi2Te3/TeO2 interface, the photoresponse of the Bi2Te3/TeO2 system shows the defect-induced photogating effect, whereas the photoresponse of the Bi2Te3/Bi2O3 system shows a capacitive response without trap/de-trap processes. The systematic analysis of the effects of the surface oxidation and related defects on the photoresponse of TIs gives insight into TI-related photodetector devices and their properties under various conditions. Finally, a simple method for controlling the oxidation of the surface and accompanied interface properties such as the valance band offset (VBO), conduction band offset (CBO), and trap/de-trap processes, which can directly affect the operation of TI-based photodetector devices, is proposed.

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