Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Xiaochi Liu, Deshun Qu, Hua Min Li, Inyong Moon, Faisal Ahmed, Changsik Kim, Myeongjin Lee, Yongsuk Choi, Jeong Ho Cho, James C. Hone, Won Jong Yoo

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Original languageEnglish
Pages (from-to)9143-9150
Number of pages8
JournalACS Nano
Volume11
Issue number9
DOIs
Publication statusPublished - 2017 Sep 26

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Liu, X., Qu, D., Li, H. M., Moon, I., Ahmed, F., Kim, C., Lee, M., Choi, Y., Cho, J. H., Hone, J. C., & Yoo, W. J. (2017). Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction. ACS Nano, 11(9), 9143-9150. https://doi.org/10.1021/acsnano.7b03994