Abstract
Here, we suggest simple method for multi value slope In-Ga-Zn O (IGZO) thin-film transistors (TFTs) using electrohydrodynamic (EHD) jet printing. To induce multi value slope, parasitic channel was intentionally formed on top of IGZO main channel using EHD jet printing. By precisely controlling parasitic channel regime with EHD jet printing, multi value slope could be realized without degradation in electrical performance of original IGZO TFTs.
Original language | English |
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Pages (from-to) | 1168-1171 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2022 |
Event | 59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States Duration: 2022 May 8 → 2022 May 13 |
Bibliographical note
Funding Information:This work was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grant 2018M3A7B4071521.
Publisher Copyright:
© 2022. John Wiley and Sons Inc. AIAA. All rights reserved.
All Science Journal Classification (ASJC) codes
- Engineering(all)